HL1326GN
1.3
µm
InGaAsP Laser Diode
ADE-208-464 (Z)
1st. Edition
November 1996
Description
The HL1326GN is a 1.3
µm
InGaAsP Fabry-Perot laser diode with a multi-quantum well (MQW)
structure. It is suitable as a light source in short and medium range fiberoptic communication
systems and other types of optical equipment. It has high optical power with low drive current
and wide operating temperature range (–40 to +85°C). The compact package is suitable for module
assembly.
Features
•
Wide operating temperature range: T
opr
= –40 to +85°C
High output power: 10 mW(Pulse)
5 mW(CW)
•
Low operating current : I
op
(P
O
= 5mW) = 20 mA (typ. @Tc = 25°C)
I
op
(P
O
= 5mW) = 40 mA (typ. @Tc = 85°C)
Internal Circuit
2
1
LD
P
o
Glass
window
3
4
PD
HL1326GN
Absolute Maximum Ratings
Item
Optical output power
Symbol
P
O
Value
10(Pulse)
*1
5(CW)
LD reverse voltage
PD reverse voltage
PD forward current
Operating temperature
Storage temperature
V
R(LD)
V
R(PD)
I
F(PD)
T
opr
T
stg
2
15
1
–40 to +85
–40 to +100
Unit
mW
mW
V
V
mA
°C
°C
Note 1: Maximum 50% duty cycle, maximum 1µs pulse width.
Optical and Electrical Characteristics
(T
C
= 25°C)
Item
Threshold current
Optical output power
Slope efficiency
Symbol Min
I
th
P
O
η
S
λ
C
σ
θ
//
—
5
0.3
0.15
Lasing wavelength
Spectral width
Beam divergence (parallel)
1280
—
—
—
—
—
100
—
—
—
Typ
8
—
0.4
0.25
1310
2
30
40
—
—
—
—
15
—
Max
20
—
—
—
1340 nm
—
—
—
0.5
0.5
—
350
20
2
nm
deg.
deg.
ns
ns
µA
nA
pF
V
Unit
mA
mW
Kink free
*2
Test Conditions
mW/mA T
C
= 25°C
T
C
= 85°C
P
O
= 5 mW, RMS
P
O
= 5 mW, RMS
P
O
= 5 mW, FWHM
P
O
= 5 mW, FWHM
10 to 90 %
90 to 10 %
P
O
= 5 mW, V
R(PD)
= 5 V
V
R(PD)
= 5 V
V
R(PD)
= 5 V, f = 1 MHz
Beam divergence(perpendicular)
θ⊥
Rise time
Fall time
Monitor current
PD dark current
PD capacitance
Photosensitivity saturation
voltage
t
r
t
f
I
S
I
(DARK)
C
t
V
R(S)
Note 2: Kink free up to 5mW is confirmed at the temperatures of 10°C, 25°C and 85°C.
2
HL1326GN
Typical Characteristics Curves
Optical Output Power vs. Forward Current
5
T
C
= 10°C
Optical output power, P (mW)
o
4
3
60°C
25°C
2
85°C
1
0
0
80
40
60
20
Forward current I
F
(mA)
100
Forward Current vs. Forward Voltage
100
Forward current, I
F
(mA)
80
60
40
T
C
= 10°C
20
85°C
25°C
0
0
0.4
1.6
0.8
1.2
Forward voltage, V
F
(V)
2.0
3
HL1326GN
Threshold Current vs. Case Temperature
100
(mA)
Threshold current, I
th
10
1
–40 –20 0
20 40 60 80
Case temperature, T
C
(°C)
100
Optical Output Power vs.Monitor Current
5
Optical output power, P
o
(mW)
4
V
R(PD)
=5 V
T
C
=25°C
3
2
1
0
0.1
0.2
0.3
0.4
Monitor current, I
S
(mA)
0.5
4
HL1326GN
Typical Characteristics Curves
Pulse Response of Laser Diode
Current pulse
T
C
= 25°C
IB = Ith
is = 20 mAp-p
Relative intensity
Optical pulse
500 ps/div
Frequency Response of Laser Diode
10
Relative optical power (dB)
5
0
–5
–10
–15
–20
10M
T
C
= 25°C
if = 2 mAp-p
Po = 5 mW
100M
1G
10G
Modulation frequency,f
M
(Hz)
5
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