HIGH VOLTAGE, HIGH CURRENT
NPN TRANSISTOR
BUY47, BUY48
•
•
•
•
Hermetic TO39 (TO-205AD) Metal Package.
High Voltage
High Current
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
BUY47
VCBO
VCEO
VEBO
IC
ICM
PD
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Collector Current
Peak Collector Current (repetitive)
TA = 25°C
Total Power Dissipation at
Total Power Dissipation at
Junction Temperature Range
Storage Temperature Range
Derate Above 25°C
TC = 25°C
Derate Above 25°C
150V
120V
BUY48
200V
170V
6V
7A
10A
1.0W
5.71mW/°C
10W
57.1mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
R
θJC
Parameters
Thermal Resistance, Junction To Ambient
Thermal Resistance, Junction To Case
Max.
175
17.5
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 3088
Issue 2
Page 1 of 3
Website:
http://www.semelab-tt.com
HIGH VOLTAGE, HIGH CURRENT
NPN TRANSISTOR
BUY47, BUY48
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
VCB = 80V
ICBO
Collector Cut-Off Current
IE = 0
VCB = 100V
IE = 0
V(BR)CBO
(1)
(1)
Min.
Typ.
Max.
10
1.0
10
1.0
Units
µA
mA
µA
mA
BUY47
TC = 125°C
BUY48
TC = 125°C
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
IC = 1.0mA
IE = 0
IC = 20mA
IB = 0
IE = 1.0mA
IC = 0.5A
BUY47
BUY48
BUY47
BUY48
IC = 0
IB = 50mA
IB = 0.2A
IB = 0.5A
IB = 50mA
IB = 0.2A
IB = 0.5A
VCE = 5V
VCE = 5V
VCE = 5V
VCE = 5V
150
200
120
170
6
0.05
0.45
1.0
0.8
1.1
1.5
130
40
40
15
150
130
45
-
V
VCEO
V(BR)EBO
(1)
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation
Voltage
VCE(sat)
(1)
IC = 2A
IC = 5A
IC = 0.5A
VBE(sat)
(1)
Base-Emitter Saturation Voltage
IC = 2A
IC = 5A
IC = 50mA
hFE
(1)
Forward-current transfer ratio
IC = 0.5A
IC = 2A
IC = 5A
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 100mA
f = 10MHz
VCB = 50V
f = 1.0MHz
IC = 5A
VCC = 40V
IE = 0
VCE = 10V
34
MHz
Cobo
ton
toff
Output Capacitance
Turn – on Time
Turn – off time
45
80
1.0
pF
IB1 = IB1 – IB2 = 0.5A
µs
2
Notes
(1) Pulse Width
≤
380us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3088
Issue 2
Page 2 of 3
HIGH VOLTAGE, HIGH CURRENT
NPN TRANSISTOR
BUY47, BUY48
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
0.89
max.
(0.035)
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
2
1
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
3
45°
TO39 (TO-205AD)
Underside View
Pin 1
Emitter
Pin 2
Base
Pin 3
Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 3088
Issue 2
Page 3 of 3
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