K4S641632E-TL70T datasheet, PDF

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K4S641632E-TL70T: DescriptionSynchronous DRAM, 4MX16, 6ns, CMOS, PDSO54; Categorystorage storage; File Size111KB，10 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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K4S641632E-TL70T Overview

Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54

K4S641632E-TL70T Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
package instruction	TSOP, TSOP54,.46,32
Reach Compliance Code	unknown
Maximum access time	6 ns
Maximum clock frequency (fCLK)	143 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
memory density	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	16
Number of terminals	54
word count	4194304 words
character code	4000000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	4MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	4096
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.14 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Base Number Matches	1

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K4S641632E

CMOS SDRAM

64Mbit SDRAM

1M x 16Bit x 4 Banks

Synchronous DRAM

LVTTL

Revision 0.0

Dec. 2000

* Samsung Electronics reserves the right to change products or specification without notice.

Rev.0.0 Dec. 2000

K4S641632E-TL70T Related Products

	K4S641632E-TL70T	K4S641632E-TL60T	K4S641632E-TL75T	K4S641632E-TC1LT	K4S641632E-TL1HT	K4S641632E-TC70T
Description	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54	Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54	Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54	Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
package instruction	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32	TSOP, TSOP54,.46,32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
Maximum access time	6 ns	5 ns	5.4 ns	6 ns	6 ns	6 ns
Maximum clock frequency (fCLK)	143 MHz	166 MHz	133 MHz	100 MHz	100 MHz	143 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e0	e0	e0	e0	e0	e0
memory density	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit	67108864 bit
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	16	16	16	16	16	16
Number of terminals	54	54	54	54	54	54
word count	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words	4194304 words
character code	4000000	4000000	4000000	4000000	4000000	4000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	4MX16	4MX16	4MX16	4MX16	4MX16	4MX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP	TSOP	TSOP	TSOP	TSOP	TSOP
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	4096	4096	4096	4096	4096	4096
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8,FP
Maximum standby current	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
Maximum slew rate	0.14 mA	0.16 mA	0.135 mA	0.125 mA	0.125 mA	0.14 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

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