CMLT3820G
SURFACE MOUNT
VERY LOW VCE(SAT)
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT3820G is
a very low VCE(SAT) NPN Transistor, designed for
applications where small size and efficiency are the
prime requirements. Packaged in a space saving
PICOmini™ SOT-563 surface mount package, this
component provides performance characteristics
suitable for the most demanding size constrained
applications.
MARKING CODE: 38G
FEATURES:
•
Device is
Halogen Free
by design
•
High Current (IC=1.0A)
•
VCE(SAT)=0.28V MAX @ IC=1.0A
SOT-563 CASE
APPLICATIONS:
•
DC/DC Converters
•
Voltage Clamping
•
Protection Circuits
•
Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
•
PICOmini™ SOT563 surface mount package
•
Complementary PNP device
CMLT7820G
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JA
80
60
5.0
1.0
2.0
300
250
-65 to +150
500
MAX
100
100
UNITS
V
V
V
A
A
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
V
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100µA
80
BVCEO
IC=10mA
60
BVEBO
5.0
IE=100µA
VCE(SAT)
IC=100mA, IB=1.0mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=50mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
100
fT
VCE=10V, IC=50mA
150
Cob
VCB=10V, IE=0, f=1.0MHz
0.115
0.15
0.28
1.1
0.9
10
MHz
pF
R2 (20-January 2010)
CMLT3820G
SURFACE MOUNT
VERY LOW VCE(SAT)
NPN SILICON TRANSISTOR
SOT-563 CASE - MECHANICAL OUTLINE
PIN CONFIGURATION
LEAD CODE:
1) Collector
2) Collector
3) Base
4) Emitter
5) Collector
6) Collector
Pins 1, 2, 5 and 6 are common.
MARKING CODE: 38G
R2 (20-January 2010)
w w w. c e n t r a l s e m i . c o m