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CMLT3820GTR

Description
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, PICOMINI-6
CategoryDiscrete semiconductor    The transistor   
File Size509KB,2 Pages
ManufacturerCentral Semiconductor
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CMLT3820GTR Overview

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, PICOMINI-6

CMLT3820GTR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-F6
JESD-609 codee0
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1
CMLT3820G
SURFACE MOUNT
VERY LOW VCE(SAT)
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMLT3820G is
a very low VCE(SAT) NPN Transistor, designed for
applications where small size and efficiency are the
prime requirements. Packaged in a space saving
PICOmini™ SOT-563 surface mount package, this
component provides performance characteristics
suitable for the most demanding size constrained
applications.
MARKING CODE: 38G
FEATURES:
Device is
Halogen Free
by design
High Current (IC=1.0A)
VCE(SAT)=0.28V MAX @ IC=1.0A
SOT-563 CASE
APPLICATIONS:
DC/DC Converters
Voltage Clamping
Protection Circuits
Battery powered Cell Phones, Pagers,
Digital Cameras, PDAs, Laptops, etc.
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
PICOmini™ SOT563 surface mount package
Complementary PNP device
CMLT7820G
SYMBOL
VCBO
VCEO
VEBO
IC
ICM
IB
PD
TJ, Tstg
Θ
JA
80
60
5.0
1.0
2.0
300
250
-65 to +150
500
MAX
100
100
UNITS
V
V
V
A
A
mA
mW
°C
°C/W
UNITS
nA
nA
V
V
V
V
V
V
V
V
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=60V
IEBO
VEB=5.0V
BVCBO
IC=100µA
80
BVCEO
IC=10mA
60
BVEBO
5.0
IE=100µA
VCE(SAT)
IC=100mA, IB=1.0mA
VCE(SAT)
IC=500mA, IB=50mA
VCE(SAT)
IC=1.0A, IB=100mA
VBE(SAT)
IC=1.0A, IB=50mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE
VCE=5.0V, IC=1.0mA
200
hFE
VCE=5.0V, IC=500mA
200
hFE
VCE=5.0V, IC=1.0A
100
fT
VCE=10V, IC=50mA
150
Cob
VCB=10V, IE=0, f=1.0MHz
0.115
0.15
0.28
1.1
0.9
10
MHz
pF
R2 (20-January 2010)

CMLT3820GTR Related Products

CMLT3820GTR CMLT3820GLEADFREE CMLT3820GBK
Description Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, PICOMINI-6 Transistor Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, PICOMINI-6
package instruction SMALL OUTLINE, R-PDSO-F6 , SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code not_compliant compliant not_compliant
Is it Rohs certified? incompatible - incompatible
Contacts 6 - 6
ECCN code EAR99 - EAR99
Maximum collector current (IC) 1 A - 1 A
Collector-emitter maximum voltage 60 V - 60 V
Configuration SINGLE - SINGLE
Minimum DC current gain (hFE) 100 - 100
JESD-30 code R-PDSO-F6 - R-PDSO-F6
JESD-609 code e0 - e0
Number of components 1 - 1
Number of terminals 6 - 6
Maximum operating temperature 150 °C - 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Polarity/channel type NPN - NPN
Maximum power dissipation(Abs) 0.25 W - 0.25 W
Certification status Not Qualified - Not Qualified
surface mount YES - YES
Terminal surface Tin/Lead (Sn/Pb) - Tin/Lead (Sn/Pb)
Terminal form FLAT - FLAT
Terminal location DUAL - DUAL
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
transistor applications SWITCHING - SWITCHING
Transistor component materials SILICON - SILICON
Nominal transition frequency (fT) 150 MHz - 150 MHz
Base Number Matches 1 1 -

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