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TUL1102G-TN3-T

Description
Power Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size238KB,5 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
Download Datasheet Parametric Compare View All

TUL1102G-TN3-T Overview

Power Bipolar Transistor

TUL1102G-TN3-T Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
Base Number Matches1
UNISONIC TECHNOLOGIES CO., LTD
TUL1102
HIGH VOLTAGE
FAST-SWITCHING NPN
POWER TRANSISTOR
DESCRIPTION
The
TUL1102
is manufactured which is using high voltage
Multi Epitaxial Planar technology for high voltage capability and
high switching speeds. For enhancing switching speeds while
maintaining a wide RBSOA, the
TUL1102
uses a Cellular Emitter
structure with planar edge termination.
Because of an increased intermediate layer which has an
intrinsic ruggedness, and it enables the transistor to withstand a
high collector current level during Breakdown condition, without
using the transil protection.
NPN SILICON TRANSISTOR
FEATURES
* High voltage
* Dynamic parameters: low spread
* For reliable operation: minimum lot-to-lot spread
* High switching speed
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen-Free
TUL1102L-TA3-T
TUL1102G-TA3-T
TUL1102L-TF1-T
TUL1102G-TF1-T
TUL1102L-TQ2-T
TUL1102G-TQ2-T
TUL1102L-TQ2-R
TUL1102G-TQ2-R
TUL1102L-TN3-R
TUL1102G-TN3-R
TUL1102L-TN3-T
TUL1102G-TN3-T
Package
TO-220
TO-220F1
TO-263
TO-263
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tube
Tape Reel
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1 of 5
QW-R203-034.C

TUL1102G-TN3-T Related Products

TUL1102G-TN3-T TUL1102L-TN3-T
Description Power Bipolar Transistor Power Bipolar Transistor
Reach Compliance Code unknown unknown
Base Number Matches 1 1
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