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MPS8098-D81Z

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size294KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MPS8098-D81Z Overview

Transistor

MPS8098-D81Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknown
Maximum collector current (IC)0.5 A
ConfigurationSingle
Minimum DC current gain (hFE)100
JESD-609 codee3
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
surface mountNO
Terminal surfaceMatte Tin (Sn)
Nominal transition frequency (fT)150 MHz
Base Number Matches1
MPS8098
Discrete POWER & Signal
Technologies
MPS8098
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60
60
6.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
MPS8098
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

MPS8098-D81Z Related Products

MPS8098-D81Z MPS8098_D81Z MPS8098_D75Z MPS8098D27Z MPS8098J18Z MPS8098J05Z MPS8098D75Z MPS8098L34Z
Description Transistor trans GP npn 60v 500ma TO-92 trans GP npn 60v 500ma TO-92 Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Reach Compliance Code unknown - - compliant unknown unknown compliant unknown
Maximum collector current (IC) 0.5 A - - 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Configuration Single - - SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 - - 75 75 75 75 75
Maximum operating temperature 150 °C - - 150 °C 150 °C 150 °C 150 °C 150 °C
Polarity/channel type NPN - - NPN NPN NPN NPN NPN
surface mount NO - - NO NO NO NO NO
Nominal transition frequency (fT) 150 MHz - - 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
ECCN code - - - EAR99 EAR99 EAR99 EAR99 EAR99
Collector-emitter maximum voltage - - - 60 V 60 V 60 V 60 V 60 V
JESD-30 code - - - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components - - - 1 1 1 1 1
Number of terminals - - - 3 3 3 3 3
Package body material - - - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - - - ROUND ROUND ROUND ROUND ROUND
Package form - - - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Certification status - - - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Terminal form - - - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location - - - BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications - - - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials - - - SILICON SILICON SILICON SILICON SILICON

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