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MPS8098D75Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size294KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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MPS8098D75Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

MPS8098D75Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)75
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
MPS8098
Discrete POWER & Signal
Technologies
MPS8098
C
BE
TO-92
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100 for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Value
60
60
6.0
500
-55 to +150
Units
V
V
V
mA
°C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
MPS8098
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation

MPS8098D75Z Related Products

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Description Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 trans GP npn 60v 500ma TO-92 trans GP npn 60v 500ma TO-92 Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 Transistor Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, 3 PIN Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
Reach Compliance Code compliant - - compliant unknown unknown unknown unknown
ECCN code EAR99 - - EAR99 - EAR99 EAR99 EAR99
Maximum collector current (IC) 0.5 A - - 0.5 A 0.5 A 0.5 A 0.5 A 0.5 A
Collector-emitter maximum voltage 60 V - - 60 V - 60 V 60 V 60 V
Configuration SINGLE - - SINGLE Single SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 75 - - 75 100 75 75 75
JESD-30 code O-PBCY-T3 - - O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
Number of components 1 - - 1 - 1 1 1
Number of terminals 3 - - 3 - 3 3 3
Maximum operating temperature 150 °C - - 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - - ROUND - ROUND ROUND ROUND
Package form CYLINDRICAL - - CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type NPN - - NPN NPN NPN NPN NPN
Certification status Not Qualified - - Not Qualified - Not Qualified Not Qualified Not Qualified
surface mount NO - - NO NO NO NO NO
Terminal form THROUGH-HOLE - - THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM - - BOTTOM - BOTTOM BOTTOM BOTTOM
transistor applications SWITCHING - - SWITCHING - SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON - - SILICON - SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz - - 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz

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