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IS49NLC96400-25B

Description
DDR DRAM, 64MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144
Categorystorage    storage   
File Size1MB,35 Pages
ManufacturerIntegrated Silicon Solution ( ISSI )
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IS49NLC96400-25B Overview

DDR DRAM, 64MX9, 2.5ns, CMOS, PBGA144, 11 X 18.50 MM, FBGA-144

IS49NLC96400-25B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeBGA
package instruction11 X 18.50 MM, FBGA-144
Contacts144
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time13 weeks 6 days
access modeMULTI BANK PAGE BURST
Maximum access time2.5 ns
Other featuresAUTO REFRESH
Maximum clock frequency (fCLK)400 MHz
I/O typeCOMMON
JESD-30 codeR-PBGA-B144
length18.5 mm
memory density603979776 bit
Memory IC TypeDDR DRAM
memory width9
Number of functions1
Number of ports1
Number of terminals144
word count67108864 words
character code64000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize64MX9
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeTBGA
Encapsulate equivalent codeBGA144,12X18,40/32
Package shapeRECTANGULAR
Package formGRID ARRAY, THIN PROFILE
power supply1.5/1.8,1.8,2.5 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Continuous burst length2,4,8
Maximum standby current0.048 A
Maximum slew rate0.97 mA
Maximum supply voltage (Vsup)1.9 V
Minimum supply voltage (Vsup)1.7 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal pitch1 mm
Terminal locationBOTTOM
width11 mm
Base Number Matches1
IS49NLC96400,IS49NLC18320,IS49NLC36160
576Mb (x9, x18, x36) Common I/O RLDRAM
2 Memory
FEATURES
400MHz DDR operation (800Mb/s/pin data rate)
28.8Gb/s peak bandwidth (x36 at 400 MHz clock
frequency)
Reduced cycle time (15ns at 400MHz)
32ms refresh (16K refresh for each bank; 128K refresh
command must be issued in total each 32ms)
8 internal banks
Non-multiplexed addresses (address multiplexing option
available)
SRAM-type interface
Programmable READ latency (RL), row cycle time, and
burst sequence length
Balanced READ and WRITE latencies in order to optimize
data bus utilization
Data mask signals (DM) to mask signal of WRITE data; DM
is sampled on both edges of DK.
Differential input clocks (CK, CK#)
Differential input data clocks (DKx, DKx#)
On-die DLL generates CK edge-aligned data and output
data clock signals
Data valid signal (QVLD)
HSTL I/O (1.5V or 1.8V nominal)
25-60Ω matched impedance outputs
2.5V V
EXT
, 1.8V V
DD
, 1.5V or 1.8V V
DDQ
I/O
On-die termination (ODT) R
TT
IEEE 1149.1 compliant JTAG boundary scan
Operating temperature:
Commercial
(T
C
= 0° to +95°C; T
A
= 0°C to +70°C),
Industrial
(T
C
= -40°C to +95°C; T
A
= -40°C to +85°C)
JUNE 2016
OPTIONS
Package:
144-ball FBGA (leaded)
144-ball FBGA (lead-free)
144-ball WBGA (lead-free)
Configuration:
64Mx9
32Mx18
16Mx36
Clock Cycle Timing:
Speed Grade
t
RC
t
CK
-25E
15
2.5
-25
20
2.5
-33
20
3.3
-5
20
5
Unit
ns
ns
Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can
reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such
applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
RLDRAM
is a registered trademark of Micron Technology, Inc.
Integrated Silicon Solution, Inc. – www.issi.com –
Rev. A1, 06/06/2016
1

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