DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA863TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5436, 2SC5800)
Q1: Built-in high gain transistor
f
T
= 12.0 GHz TYP.,
S
21e
2
= 9.0 dB TYP. @ V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
f
T
= 4.5 GHz TYP.,
S
21e
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
Q1
3-pin thin-type ultra super minimold part No.
2SC5436
Q2
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
µ
PA863TD
µ
PA863TD-T3
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15686EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001
µ
PA863TD
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Symbol
Q1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
Q2
9
5.5
1.5
100
190
Unit
5
3
2
30
90
V
V
V
mA
mW
°C
°C
210 in 2 elements
Junction Temperature
Storage Temperature
T
j
T
stg
150
−65
to +150
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy PCB
2
Data Sheet P15686EJ1V0DS
µ
PA863TD
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 10 mA
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
MIN.
−
−
70
10.0
7.0
−
−
TYP.
−
−
110
12.0
9.0
1.3
0.4
MAX.
100
100
140
−
−
2.0
0.7
Unit
nA
nA
−
GHz
dB
dB
pF
f
T
S
21e
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 3 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product (1)
Gain Bandwidth Product (2)
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
MIN.
−
−
100
3.0
5.0
3.0
4.5
−
−
TYP.
−
−
120
4.5
6.5
4.0
5.5
1.9
0.6
MAX.
600
600
145
−
−
−
−
2.5
0.8
Unit
nA
nA
−
GHz
GHz
dB
dB
dB
pF
f
T
f
T
S
21e
S
21e
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 15 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
2
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance when the emitter grounded
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value of Q1
h
FE
Value of Q2
FB
xC
70 to 140
100 to 145
Data Sheet P15686EJ1V0DS
3
µ
PA863TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
Total Power Dissipation P
tot
(mW)
250
200
150
100
50
210
190
Mounted on Glass Epoxy PCB
(1.08 cm
2
×
1.0 mm (t) )
2 Elements in total
Q2
90
Q1
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Q1
Q2
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
f = 1 MHz
0.8
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
1.0
f = 1 MHz
0.8
1.0
0.6
0.6
0.4
0.4
0.2
0.2
0
1
2
3
4
5
0
2
4
6
8
10
Collector to Base Voltage V
CB
(V)
Collector to Base Voltage V
CB
(V)
4
Data Sheet P15686EJ1V0DS
µ
PA863TD
Q1
Q2
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 1 V
Collector Current I
C
(mA)
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 2 V
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
10
1
0.1
0.01
0.001
V
CE
= 2 V
Collector Current I
C
(mA)
0.0001
0.5
0.6
0.7
0.8
0.9
1.0
0.0001
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
Data Sheet P15686EJ1V0DS
5
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