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UPA863TD-T3FB-A

Description
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size143KB,28 Pages
ManufacturerNEC Electronics
Environmental Compliance
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UPA863TD-T3FB-A Overview

RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6

UPA863TD-T3FB-A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.03 A
Collector-based maximum capacity0.7 pF
Collector-emitter maximum voltage3 V
ConfigurationSEPARATE, 2 ELEMENTS
highest frequency bandL BAND
JESD-30 codeR-PDSO-F6
JESD-609 codee6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)12000 MHz
Base Number Matches1
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA863TD
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5436, 2SC5800)
Q1: Built-in high gain transistor
f
T
= 12.0 GHz TYP.,
S
21e
2
= 9.0 dB TYP. @ V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
Q2: Built-in low phase distortion transistor suited for OSC operation
f
T
= 4.5 GHz TYP.,
S
21e
2
= 4.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
Q1
3-pin thin-type ultra super minimold part No.
2SC5436
Q2
2SC5800
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
10 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
µ
PA863TD
µ
PA863TD-T3
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15686EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
Printed in Japan
©
2001

UPA863TD-T3FB-A Related Products

UPA863TD-T3FB-A UPA863TD-T3FB UPA863TD-FB UPA863TD-T3 UPA863TD-FB-A
Description RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, LEADLESS MINIMOLD PACKAGE-6 RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, LEADLESS MINIMOLD PACKAGE-6
package instruction SMALL OUTLINE, R-PDSO-F6 LEADLESS MINIMOLD PACKAGE-6 LEADLESS MINIMOLD PACKAGE-6 SMALL OUTLINE, R-PDSO-F6 LEADLESS MINIMOLD PACKAGE-6
Reach Compliance Code compliant compliant compliant unknown compliant
JESD-30 code R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
Number of terminals 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL
Is it Rohs certified? conform to incompatible incompatible - conform to
Maximum collector current (IC) 0.03 A 0.03 A 0.03 A - 0.03 A
Collector-based maximum capacity 0.7 pF 0.7 pF 0.7 pF - 0.7 pF
Collector-emitter maximum voltage 3 V 3 V 3 V - 3 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS
highest frequency band L BAND L BAND L BAND - L BAND
JESD-609 code e6 e0 e0 - e6
Number of components 2 2 2 - 2
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - 260
Polarity/channel type NPN NPN NPN - NPN
Terminal surface TIN BISMUTH TIN LEAD TIN LEAD - TIN BISMUTH
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - 10
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER - AMPLIFIER
Transistor component materials SILICON SILICON SILICON - SILICON
Nominal transition frequency (fT) 12000 MHz 12000 MHz 12000 MHz - 12000 MHz
Base Number Matches 1 1 1 - -
Maker - - NEC Electronics NEC Electronics NEC Electronics
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