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ZTX500STOB

Description
Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size42KB,2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZTX500STOB Overview

Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZTX500STOB Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionIN-LINE, R-PSIP-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-W3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature200 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
VCEsat-Max0.35 V
Base Number Matches1
PNP SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 1 – MARCH 94
ZTX500
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
E-Line
TO92 Compatible
VALUE
-25
-25
-5
-500
300
-55 to +175
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
MIN. TYP.
-25
-25
-5
-0.2
-0.2
-0.35
-0.65
50
150
6
7
-1
300
MHz
pF
dB
MAX.
UNIT
V
V
V
µ
A
µ
A
CONDITIONS.
I
C
=-10
µ
A
I
C
=-5mA
I
E
=-10
µ
A
V
CB
=-25V
V
EB
=-4V
I
C
=-50mA, I
B
=-5mA*
I
C
=-10mA, I
B
=-1mA*
I
C
=-10mA, V
CE
=-6V*
I
C
=-10mA, V
CE
=-6V
f=100MHz
V
CB
=-6V, f=1MHz
I
C
=-100
µ
A, R
S
=1.5K
f=1KHz
Emitter Cut-Off Current I
EBO
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
V
V
Static Forward Current h
FE
Transfer Ratio
Transition Frequency
Output Capacitance
Noise Figure
f
T
C
obo
N
3-184

ZTX500STOB Related Products

ZTX500STOB ZTX500STZ ZTX500STOA
Description Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 Small Signal Bipolar Transistor, 0.2A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3
Is it Rohs certified? incompatible incompatible incompatible
package instruction IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3 IN-LINE, R-PSIP-W3
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 25 V 25 V 25 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50
JESD-30 code R-PSIP-W3 R-PSIP-W3 R-PSIP-W3
JESD-609 code e0 e0 e0
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE IN-LINE
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE WIRE
Terminal location SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
VCEsat-Max 0.35 V 0.35 V 0.35 V
Base Number Matches 1 1 1
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