UPD4442322GF-A40 datasheet, PDF

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UPD4442322GF-A40: DescriptionIC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC; Categorystorage storage; File Size211KB，28 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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UPD4442322GF-A40 Overview

IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC

UPD4442322GF-A40 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Maximum access time	2.5 ns
Maximum clock frequency (fCLK)	250 MHz
I/O type	COMMON
JESD-30 code	R-PQFP-G100
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	32
Number of terminals	100
word count	131072 words
character code	128000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	128KX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	QFP
Encapsulate equivalent code	QFP100,.63X.87
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
power supply	2.5/3.3,3.3 V
Certification status	Not Qualified
Maximum standby current	0.01 A
Minimum standby current	3.14 V
Maximum slew rate	0.5 mA
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	QUAD
Base Number Matches	1

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PRELIMINARY DATA SHEET

MOS INTEGRATED CIRCUIT

PD4442162, 4442182, 4442322, 4442362

4M-BIT CMOS SYNCHRONOUS FAST SRAM

PIPELINED OPERATION

SINGLE CYCLE DESELECT

Description

The

PD4442162 is a 262,144-word by 16-bit, the

PD4442182 is a 262,144-word by 18-bit,

PD4442322 is a

131,072-word by 32-bit and the

PD4442362 is a 131,072-word by 36-bit synchronous static RAM fabricated with

advanced CMOS technology using Full-CMOS six-transistor memory cell.

The

PD4442162,

PD4442182,

PD4442322 and

PD4442362 integrates unique synchronous peripheral circuitry,

2-bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the

single clock input (CLK).

The

PD4442162,

PD4442182,

PD4442322 and

PD4442362 are suitable for applications which require

synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer

memory.

ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State

(“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes

normal operation.

The

PD4442162,

PD4442182,

PD4442322 and

PD4442362 are packaged in 100-pin PLASTIC LQFP with a

1.4 mm package thickness for high density and low capacitive loading.

Features

•

3.3 V (A version) or 2.5 V (C version) Core Supply

•

Synchronous operation

•

Internally self-timed write control

•

Burst read / write : Interleaved burst and linear burst sequence

•

Fully registered inputs and outputs for pipelined operation

•

Single-Cycle deselect timing

•

All registers triggered off positive clock edge

•

3.3 V or 2.5 V LVTTL Compatible : All inputs and outputs

•

Fast clock access time : 2.5 ns (250 MHz), 2.8 ns (225 MHz), 3.0 ns (200 MHz), 3.5 ns (167 MHz)

•

Asynchronous output enable : /G

•

Burst sequence selectable : MODE

•

Sleep mode : ZZ (ZZ = Open or Low : Normal operation)

•

Separate byte write enable : /BW1 - /BW4 (

PD4442322,

PD4442362), /BW1 - /BW2 (

PD4442162,

PD4442182), /BWE

Global write enable : /GW

•

Three chip enables for easy depth expansion

•

Common I/O using three state outputs

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. M14520EJ3V0DS00 (3rd edition)

Date Published May 2001 NS CP(K)

Printed in Japan

The mark

shows major revised points.

2000

UPD4442322GF-A40 Related Products

	UPD4442322GF-A40	UPD4442322GF-A50	UPD4442362GF-A50C	UPD4442162GF-A50C	UPD4442322GF-C50	UPD4442182GF-C50	UPD4442162GF-A44	UPD4442182GF-A50	UPD4442182GF-A40
Description	IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC	IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC	IC,SYNC SRAM,128KX36,CMOS,QFP,100PIN,PLASTIC	IC,SYNC SRAM,256KX16,CMOS,QFP,100PIN,PLASTIC	IC,SYNC SRAM,128KX32,CMOS,QFP,100PIN,PLASTIC	IC,SYNC SRAM,256KX18,CMOS,QFP,100PIN,PLASTIC	IC,SYNC SRAM,256KX16,CMOS,QFP,100PIN,PLASTIC	IC,SYNC SRAM,256KX18,CMOS,QFP,100PIN,PLASTIC	IC,SYNC SRAM,256KX18,CMOS,QFP,100PIN,PLASTIC
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknow	unknow	unknow
Maximum access time	2.5 ns	3 ns	3 ns	3 ns	3 ns	3 ns	2.8 ns	3 ns	2.5 ns
Maximum clock frequency (fCLK)	250 MHz	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz	225 MHz	200 MHz	250 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100	R-PQFP-G100
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0	e0
memory density	4194304 bit	4194304 bit	4718592 bit	4194304 bit	4194304 bit	4718592 bit	4194304 bi	4718592 bi	4718592 bi
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	32	32	36	16	32	18	16	18	18
Number of terminals	100	100	100	100	100	100	100	100	100
word count	131072 words	131072 words	131072 words	262144 words	131072 words	262144 words	262144 words	262144 words	262144 words
character code	128000	128000	128000	256000	128000	256000	256000	256000	256000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	128KX32	128KX32	128KX36	256KX16	128KX32	256KX18	256KX16	256KX18	256KX18
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP	QFP
Encapsulate equivalent code	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87	QFP100,.63X.87
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V	2.5,3.3 V	2.5 V	2.5 V	3.3 V	2.5/3.3,3.3 V	2.5/3.3,3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A	0.01 A
Minimum standby current	3.14 V	3.14 V	3.14 V	3.14 V	2.38 V	2.38 V	3.14 V	3.14 V	3.14 V
Maximum slew rate	0.5 mA	0.42 mA	0.42 mA	0.42 mA	0.42 mA	0.42 mA	0.46 mA	0.42 mA	0.5 mA
surface mount	YES	YES	YES	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm	0.635 mm
Terminal location	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD	QUAD
Maker	-	-	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation	Renesas Electronics Corporation

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