IDT7164S30DB datasheet, PDF - EEWORLD Datasheet

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IDT7164S30DB: DescriptionStandard SRAM, 8KX8, 29ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28; Categorystorage storage; File Size105KB，9 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7164S30DB Overview

Standard SRAM, 8KX8, 29ns, CMOS, CDIP28, 0.600 INCH, CERDIP-28

IDT7164S30DB Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	DIP
package instruction	0.600 INCH, CERDIP-28
Contacts	28
Reach Compliance Code	not_compliant
ECCN code	3A001.A.2.C
Maximum access time	29 ns
I/O type	COMMON
JESD-30 code	R-GDIP-T28
JESD-609 code	e0
length	37.211 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	8KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	CERAMIC, GLASS-SEALED
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.6
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum seat height	5.08 mm
Maximum standby current	0.02 A
Minimum standby current	4.5 V
Maximum slew rate	0.17 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	15.24 mm
Base Number Matches	1

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CMOS STATIC RAM

64K (8K x 8-BIT)

Integrated Device Technology, Inc.

IDT7164S

IDT7164L

FEATURES:

• High-speed address/chip select access time

— Military: 20/25/30/35/45/55/70/85ns (max.)

— Commercial: 15/20/25/35/70ns (max.)

• Low power consumption

• Battery backup operation — 2V data retention voltage

(L Version only)

• Produced with advanced CMOS high-performance

technology

• Inputs and outputs directly TTL-compatible

• Three-state outputs

• Available in:

— 28-pin DIP and SOJ

• Military product compliant to MIL-STD-883, Class B

DESCRIPTION:

The IDT7164 is a 65,536 bit high-speed static RAM orga-

nized as 8K x 8. It is fabricated using IDT’s high-performance,

high-reliability CMOS technology.

Address access times as fast as 15ns are available and the

circuit offers a reduced power standby mode. When

goes

HIGH or CS

goes LOW, the circuit will automatically go to,

and remain in, a low-power stand by mode. The low-power (L)

version also offers a battery backup data retention capability

at power supply levels as low as 2V.

All inputs and outputs of the IDT7164 are TTL-compatible

and operation is from a single 5V supply, simplifying system

designs. Fully static asynchronous circuitry is used, requiring

no clocks or refreshing for operation.

The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ;

and 28-pin 600 mil DIP.

Military grade product is manufactured in compliance with

the latest revision of MIL-STD-883, Class B, making it ideally

suited to military temperature applications demanding the

highest level of performance and reliability.

FUNCTIONAL BLOCK DIAGRAM

ADDRESS

DECODER

65,536 BIT

MEMORY ARRAY

GND

I/O

I/O CONTROL

I/O

CONTROL

LOGIC

2967 drw 01

The IDT logo is a registered trademark of Integrated Device Technology, Inc.

MILITARY AND COMMERCIAL TEMPERATURE RANGES

Integrated Device Technology, Inc.

For latest information contact IDT's web site at www.idt.com or fax-on-demand at 408-492-8391.

MAY 1996

2967/8

6.1

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