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IDH12S60C
2
nd
Generation thinQ!
TM
SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• Switching behavior benchmark
• No reverse recovery/ No forward recovery
• No temperature influence on the switching behavior
• High surge current capability
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC
1)
for target applications
• Breakdown voltage tested at 5mA
2)
Product Summary
V
DC
Q
c
I
F
600
30
12
V
nC
A
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
• Motor Drives
Type
IDH12S60C
Package
PG-TO220-2
Marking
D12S60C
Pin 1
C
Pin 2
A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous forward current
RMS forward current
Symbol Conditions
I
F
I
F,RMS
T
C
<140 °C
f
=50 Hz
T
C
=25 °C,
t
p
=10 ms
T
j
=150 °C,
T
C
=100 °C,
D
=0.1
T
C
=25 °C,
t
p
=10 µs
T
C
=25 °C,
t
p
=10 ms
Value
12
18
98
49
410
48
600
V
R
= 0….480V
T
C
=25 °C
50
115
-55 ... 175
M3 and M3.5 screws
T
sold
1.6mm (0.063 in.)
from case for 10s
page 1
60
260
A
2
s
V
V/ns
W
°C
Mcm
°C
Unit
A
Surge non-repetitive forward current,
I
F,SM
sine halfwave
Repetitive peak forward current
Non-repetitive peak forward current
i
²t value
Repetitive peak reverse voltage
Diode dv/dt ruggedness
Power dissipation
Operating and storage temperature
Mounting torque
Soldering temperature,
wavesoldering only allowed at leads
Rev. 2.1
I
F,RM
I
F,max
∫i
2
dt
V
RRM
dv/ dt
P
tot
T
j
,
T
stg
2013-02-12
IDH12S60C
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance,
junction - ambient
R
thJC
R
thJA
leaded
-
-
-
-
1.3
62
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
DC blocking voltage
Diode forward voltage
V
DC
V
F
I
R
=0.16 mA
I
F
=12 A,
T
j
=25 °C
I
F
=12 A,
T
j
=150 °C
Reverse current
I
R
V
R
=600 V,
T
j
=25 °C
V
R
=600 V,
T
j
=150 °C
AC characteristics
Total capacitive charge
Switching time
3)
Q
c
t
c
C
V
R
=400 V,I
F
≤I
F,max
,
di
F
/dt =200 A/µs,
T
j
=150 °C
V
R
=1 V,
f
= MHz
V
R
=300 V,
f
=1 MHz
V
R
=600 V,
f
=1 MHz
-
-
-
-
-
30
-
530
70
70
-
<10
-
-
-
nC
ns
pF
600
-
-
-
-
-
1.5
1.7
1.6
6
-
1.7
2.1
160
1600
µA
V
1)
2)
3)
J-STD20 and JESD22
All devices tested under avalanche conditions, for a time periode of 5ms, at 5mA.
t
c
is the time constant for the capacitive displacement current waveform (independent from T
j
, I
LOAD
and
di/dt), different from t
rr
, which is dependent on T
j
, I
LOAD
, di/dt. No reverse recovery time constant t
rr
due to
absence of minority carrier injection.
4)
Only capacitive charge occuring, guaranteed by design.
Rev. 2.1
page 2
2013-02-12
IDH12S60C
1 Power dissipation
P
tot
=f(T
C
)
parameter: R
thJC(max)
120
2 Diode forward current
I
F
=f(T
C
);
T
j
≤175 °C
parameter:
R
thJC(max)
;
V
F(max)
35
100
30
25
80
P
tot
[W]
20
60
I
F
[A]
15
10
5
0
25
50
75
100
125
150
175
200
25
50
75
100
125
150
175
200
40
20
0
T
C
[°C]
T
C
[°C]
3 Typ. forward characteristic
I
F
=f(V
F
);
t
p
=400 µs
parameter:
T
j
40
-55 °C
25 °C
100 °C
150 °C
175 °C
4 Typ. forward characteristic in surge current
mode
I
F
=f(V
F
);
t
p
=400 µs; parameter: T
j
140
120
30
100
150 °C
80
25 °C
I
F
[A]
20
I
F
[A]
60
-55 °C
175 °C
40
10
20
100 °C
0
0
1
2
3
4
0
0
1
2
3
4
5
6
7
V
F
[V]
V
F
[V]
Rev. 2.1
page 3
2013-02-12
IDH12S60C
5 Typ. forward power dissipation vs.
average forward current
P
F,AV
=f(I
F
),
T
C
=100 °C, parameter:
D
=t
p
/T
60
6 Typ. reverse current vs. reverse voltage
I
R
=f(V
R
)
parameter:
T
j
10
2
0.1
0.2
0.5
1
50
10
1
40
P
F(AV)
[W]
10
0
30
I
R
[µA]
175 °C
10
-1
20
150 °C
100 °C
10
10
-2
25 °C
-55 °C
0
0
5
10
15
20
25
30
35
10
-3
100
200
300
400
500
600
I
F(AV)
[A]
V
R
[V]
7 Transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
10
1
8 Typ. capacitance vs. reverse voltage
C
=f(V
R
);
T
C
=25 °C,
f
=1 MHz
700
600
500
10
0
0.5
Z
thJC
[K/W]
400
0.2
0.1
0.05
0.02
0.01
C
[pF]
10
-4
10
-3
10
-2
10
-1
10
0
300
10
-1
200
single pulse
100
10
-2
10
-5
0
10
-1
10
0
10
1
10
2
10
3
t
P
[s]
V
R
[V]
Rev. 2.1
page 4
2013-02-12
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