SD453N/R Series
Vishay Semiconductors
Fast Recovery Diodes
(Stud Version), 400/450 A
FEATURES
•
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400/450 A
B-8
PRODUCT SUMMARY
I
F(AV)
High power fast recovery diode series
2.0 to 3.0 µs recovery time
High voltage ratings up to 2500 V
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 150 °C
RoHS complaint
Lead (Pb)-free
Designed and qualified for industrial level
RoHS
COMPLIANT
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
SD453N/R
S20
400
T
C
630
50 Hz
60 Hz
Range
2.0
T
J
25
- 40 to 150
9300
9730
1200 to 2500
3.0
70
710
9600
10 050
V
µs
°C
A
S30
450
UNITS
A
°C
I
F(AV)
I
F(RMS)
I
FSM
V
RRM
t
rr
T
J
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
12
SD453N/R
16
20
25
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
1200
1600
2000
2500
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
1300
1700
2100
2600
50
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Document Number: 93176
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
1
SD453N/R Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current at
case temperature
SYMBOL
TEST CONDITIONS
SD453N/R
S20
400
70
630
55
t = 10 ms
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
9300
9730
7820
Sinusoidal half wave,
initial T
J
= T
J
maximum
8190
432
395
306
279
4320
1.00
1.09
0.80
0.74
2.20
710
52
9600
10 050
8070
8450
460
420
326
297
4600
0.95
1.04
0.60
m
0.54
1.85
V
kA
2
s
V
kA
2
s
A
S30
450
UNITS
A
°C
A
°C
Fast Recovery Diodes
(Stud Version), 400/450 A
I
F(AV)
180° conduction, half sine wave
I
F(RMS)
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
RECOVERY CHARACTERISTICS
MAXIMUM VALUE
AT T
J
= 25 °C
CODE
t
rr
AT 25 % I
RRM
( s)
2.0
3.0
TEST CONDITIONS
I
pk
SQUARE
PULSE
(A)
1000
TYPICAL VALUES
AT T
J
= 150 °C
V
r
(V)
t
rr
AT 25 % I
RRM
( s)
3.5
5.0
Q
rr
( C)
250
380
I
rr
(A)
120
150
I
FM
t
rr
t
Q
rr
I
RM(REC)
dI/dt
(A/ s)
S20
S30
dir
dt
50
- 50
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque ± 10 %
Approximate weight
Case style
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2
See dimensions (link at the end of datasheet)
For technical questions, contact: ind-modules@vishay.com
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
TEST CONDITIONS
VALUES
- 40 to 150
0.1
K/W
0.04
50
454
B-8
Document Number: 93176
Revision: 08-Apr-08
Nm
g
UNITS
°C
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.010
0.014
0.017
0.025
0.042
RECTANGULAR CONDUCTION
0.008
0.014
0.019
0.026
0.042
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Vishay Semiconductors
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Maximum Allowable Case T
emperature (°C)
140
130
120
110
100
90
80
70
S
D453N/ R..S S
20 eries
R
thJC
(DC) = 0.1 K/ W
Maximum Allowable Case T
emperature (°C)
150
150
140
130
120
110
100
90
80
70
60
0
100
S
D453N/ R..S S
30 eries
R
thJC
(DC) = 0.1 K/ W
Conduction Angle
Conduction Angle
180°
30°
200
60°
300
90°
120°
400
500
30°
60
0
60° 90° 120°
180°
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Fig. 1 - Current Ratings Characteristics
Average Forward Current (A)
Fig. 3 - Current Ratings Characteristics
Maximum Allowable Case T
emperature (°C)
150
140
130
120
110
100
90
80
70
60
50
0
100
200
300
400
500
600
700
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
60°
30°
90°
120°
180°
DC
Conduction Period
Maximum Allowable Cas T
e emperature (°C)
150
140
130
120
110
100
90
80
70
60
50
40
0
200
400
600
800
Average Forward Current (A)
Fig. 4 - Current Ratings Characteristics
30°
60°
90°
120°
180°
DC
Conduc tion Period
S
D453N/ R 20 S
..S
eries
R
thJC
(DC) = 0.1 K/ W
S
D453N/ R 30 S
..S
eries
R
thJC
(DC) = 0.1 K/ W
Document Number: 93176
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
3
SD453N/R Series
Vishay Semiconductors
Maximum Average Forward Power Los (W)
s
800
700
600
500
400
300
200
100
0
0
50 100 150 200 250 300 350 400 450
Average Forward Current (A)
Fig. 5 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
Peak Half Sine Wave Forward Current (A)
1000
900
800
700
600
DC
180°
120°
90°
60°
30°
Conduction Angle
Fast Recovery Diodes
(Stud Version), 400/450 A
Maximum Average Forward Power Loss (W)
1000
900
800
700
600
DC
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
R Limit
MS
500 RMS Limit
400
Conduction Period
300
200
100
0
0
100 200 300 400 500 600 700 800
Average Forward Current (A)
Fig. 8 - Forward Power Loss Characteristics
S
D453N/ R..S S
30 eries
T = 150°C
J
S
D453N/ R..S S
20 eries
T
J
= 150°C
9000
8000
7000
6000
5000
4000
3000
2000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 150 °C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
500 RMS Limit
400
300
200
100
0
0
100
200
300
400
500
600
700
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
Conduction Period
S
D453N/ R..S S
20 eries
T
J
= 150°C
S
D453N/ R..S S
20 eries
10
100
Number Of Eq ual Amplitud e Half Cycle Current Pulses (N)
Fig. 9 - Maximum Non-Repetitive Surge Current
Maximum Average Forward Power Loss (W)
Peak Half S Wave Forward Current (A)
ine
800
700
600
500
400
300
200
100
0
0
100
200
300
400
500
Average Forward Current (A)
Fig. 7 - Forward Power Loss Characteristics
Conduction Angle
10000
180°
120°
90°
60°
30°
RMS Limit
Maximum Non Repetitive S
urge Current
Vers Pulse T
us
rain Duration.
9000
Initial T = 150 °C
J
No Voltage Reapplied
8000
Rated V
RRM
Reapplied
7000
6000
5000
4000
3000
S
D453N/ R..S S
20 eries
S
D453N/ R..S S
30 eries
T
J
= 150°C
2000
0.01
0.1
Pulse T
rain Duration (s)
1
Fig. 10 - Maximum Non-Repetitive Surge Current
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For technical questions, contact: ind-modules@vishay.com
Document Number: 93176
Revision: 08-Apr-08
SD453N/R Series
Fast Recovery Diodes
(Stud Version), 400/450 A
Peak Half S Wave F
ine
orward Current (A)
Vishay Semiconductors
9000
Ins
tantaneous Forward Current (A)
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
8000
Initial T
J
= 150 °C
@60 Hz 0.0083 s
7000
@50 Hz 0.0100 s
6000
5000
4000
3000
2000
1
10
100
Number Of Eq ual Amplitud e Half Cycle Current Pulses (N)
10000
S
D453N/ R 20 S
..S
eries
1000
T
J
= 25°C
T = 150°C
J
100
0.5
S
D453N/ R..S S
30 eries
1
1.5
2
2.5
3
3.5
Fig. 11 - Maximum Non-Repetitive Surge Current
10000
9000
8000
7000
6000
5000
4000
3000
2000
0.01
S
D453N/ R..S S
30 eries
Instantaneous Forward Voltage (V)
Fig. 13 - Forward Voltage Drop Characteristics
Peak Half S Wave Forward Current (A)
ine
Ins
tantaneous Forward Current (A)
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 150 °C
J
No Voltage Reapplied
Rated V
RRM
Reapplied
10000
S
D453N/ R 30 S
..S
eries
1000
T
J
= 25°C
T = 150°C
J
0.1
1
100
0.5
1
1.5
2
2.5
3
3.5
4
Pulse T
rain Duration (s)
Fig. 12 - Maximum Non-Repetitive Surge Current
1
Instantaneous Forward Voltage (V)
Fig. 14 - Forward Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/W)
0.1
S
teady S
tate Value:
R
thJC
= 0.1 K/ W
(DC Operation)
0.01
S
D453N/ R..S S S
20/ 30 eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 15 - Thermal Impedance Z
thJC
Characteristic
Document Number: 93176
Revision: 08-Apr-08
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
5
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