UF3BT/R13 datasheet, PDF - EEWORLD Datasheet

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UF3BT/R13: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN; CategoryDiscrete semiconductor diode; File Size70KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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UF3BT/R13 Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN

UF3BT/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	DO-214AB
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	compliant
application	EFFICIENCY
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-214AB
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse recovery time	0.05 µs
surface mount	YES
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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UF3A~UF3J

SURFACE MOUNT ULTRAFAST RECTIFIER

VOLTAGE

50 to 600 Volts

CURRENT

3 Amperes

FEATURES

For surface mounted applications

Low profile package

Built-in strain relief

Easy pick and place

Ultrafast recovery times for high efficiency

Plastic package has Underwriters Laboratory Flammability

Classification 94V-O

• Glass passivated junction

• Lead free in comply with EU RoHS 2002/95/EC directives

•

0.128(3.25)

0.108(2.75)

0.245(6.22)

0.220(5.59)

0.280(7.11)

0.260(6.60)

0.012(0.305)

0.006(0.152)

0.103(2.62)

0.079(2.00)

0.050(1.27)

0.030(0.76)

0.320(8.13)

0.305(7.75)

0.008(0.203)

0.002(0.051)

MECHANICAL DATA

•

Case: JEDEC DO-214AB molded plastic

Terminals: Solder plated, solderable per MIL-STD-750,Method 2026

Polarity: Indicated by cathode band

Standard packaging: 16mm tape (EIA-481)

Weight: 0.0082 ounce, 0.2325 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

PA RA ME TE R

Ma xi mum Re curre nt P e a k Re ve rse Vo lta g e

Ma xi mum RMS Vo lta g e

Ma xi mum D C B lo ck i ng Vo lta g e

Ma xi mum A ve ra g e F o rwa rd C urre nt

P e a k F o rwa rd S urg e C urre nt : 8 .3 ms s i ng le ha lf s i ne -wa ve

sup e ri mp o s e d o n ra te d lo a d (J E D E C me tho d )

Ma xi mum F o rwa rd Vo lta g e a t 3 A

=2 5

=1 2 5

S YMB OL

RRM

RMS

F (AV )

F S M

θJ

S TG

UF 3 A

UF 3 B

100

UF 3 D

200

140

200

100

UF 3 G

400

280

400

UF 3 J

600

420

600

UNITS

300

-5 5 to +1 5 0

1 .3

1 .7

μA

Ma xi mum D C Re ve rse C urre nt a t Ra te d D C B lo c k i ng Vo lta g e

Typ i ca l Juncti o n C a p a ci ta nc e (No te 2 )

Typ i ca l The rm a l Re si s ta nc e (No te 3 )

Ma xi mum Re ve rs e Re c o ve ry Ti me (No te 1 )

Op e ra ti ng Juncti o n a nd S to ra g e Te mp e ra ture Ra ng e

C / W

100

NOTES:1. Reverse Recovery Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2. Measured at 1 MHz and applied V

= 4.0 volts.

3. 8.0 mm

( .013mm thick ) land areas.

March 13,2012-REV.04

PAGE . 1

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