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BCX70JR

Description
Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size61KB,2 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric Compare View All

BCX70JR Overview

Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BCX70JR Parametric

Parameter NameAttribute value
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)90
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)800 ns
Maximum opening time (tons)150 ns
Base Number Matches1
SOT23 NPN SILICON PLANAR
SMALL SIGNAL TRANSISTOR
ISSUE 2 – FEBRUARY 95
PARTMARKING DETAIL –
BCX70G
BCX70H
BCX70J
BCX70K
BCX70GR
BCX70HR
BCX70JR
BCX70KR
BCX71
–
–
–
–
–
–
–
–
AG
AH
AJ
AK
AW
9P
AX
P9
BCX70
E
C
B
COMPLEMENTARY TYPE –
PARAMETER
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Base Current
ABSOLUTE MAXIMUM RATINGS.
SYMBOL
V
CES
V
CEO
V
EBO
I
C
I
B
P
TOT
tj:tstg
VALUE
45
45
5
200
50
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group G
Min.
h
11e
h
12e
h
21e
h
22e
1.6
Typ.
2.7
1.5
200
18
30
Max.
4.5
h
FE
Group H
Min.
2.5
Typ.
3.6
2
260
24
50
Max.
6.0
h
FE
Group J
Min.
3.2
Typ.
4.5
2
330
30
60
Max.
8.5
h
FE
Group K
Min.
4.5
Typ.
7.5
3
520
50
100
µ
S
Max.
12
k
10
-4
SWITCHING CIRCUIT
-V
BB
V
CC
(+10V)
R
2
R
L
1
µ
sec
+10V
t
r
< 5nsec
Mark/Space ratio < 0.01
Z
s
=50
50
R
1
t
r
< 5nsec
Z
in
100k
Oscilloscope
PAGE NO

BCX70JR Related Products

BCX70JR BCX70KR
Description Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Maker Diodes Incorporated Diodes Incorporated
Parts packaging code SOT-23 SOT-23
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 90 100
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz
Maximum off time (toff) 800 ns 800 ns
Maximum opening time (tons) 150 ns 150 ns
Base Number Matches 1 1
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