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BC213

Description
100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size107KB,4 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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100mA, 30V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

BC213 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage30 V
ConfigurationSINGLE
Minimum DC current gain (hFE)80
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power consumption environment1 W
Maximum power dissipation(Abs)0.35 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)360 MHz
VCEsat-Max0.6 V
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Amplifier Transistors
Order this document
by BC212/D
PNP Silicon
COLLECTOR
3
2
BASE
1
EMITTER
BC212,B
BC213
BC214
MAXIMUM RATINGS
Rating
Collector – Emitter Voltage
Collector – Base Voltage
Emitter – Base Voltage
Collector Current — Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
PD
TJ, Tstg
BC
212
–50
–60
BC
213
–30
–45
–5.0
–100
350
2.8
1.0
8.0
– 55 to +150
BC
214
–30
–45
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/°C
Watts
mW/°C
°C
1
2
3
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
R
q
JA
R
q
JC
Max
357
125
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Collector – Emitter Breakdown Voltage
(IC = –2.0 mAdc, IB = 0)
Collector – Base Breakdown Voltage
(IC = –10
m
A, IE = 0)
Emitter – Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0)
Collector–Emitter Leakage Current
(VCB = –30 V)
Emitter–Base Leakage Current
(VEB = –4.0 V, IC = 0)
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
BC212
BC213
BC214
Symbol
V(BR)CEO
Min
–50
–30
–30
–60
–45
–45
–5
–5
–5
Typ
Max
–15
–15
–15
–15
–15
–15
Unit
Vdc
V(BR)CBO
Vdc
V(BR)EBO
Vdc
ICBO
nAdc
IEBO
nAdc
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1996
1

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