BS616LV1012AI55 datasheet, PDF

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BS616LV1012AI55: DescriptionStandard SRAM, 64KX16, 55ns, CMOS, PBGA48; Categorystorage storage; File Size261KB，9 Pages; ManufacturerBrilliance

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BS616LV1012AI55 Overview

Standard SRAM, 64KX16, 55ns, CMOS, PBGA48

BS616LV1012AI55 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Brilliance
package instruction	FBGA, BGA48,6X8,30
Reach Compliance Code	unknown
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-PBGA-B48
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	16
Humidity sensitivity level	3
Number of terminals	48
word count	65536 words
character code	64000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	64KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA48,6X8,30
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
power supply	2.5/3.3 V
Certification status	Not Qualified
Maximum standby current	8e-7 A
Minimum standby current	1.5 V
Maximum slew rate	0.023 mA
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	BALL
Terminal pitch	0.75 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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BSI

FEATURES

Very Low Power/Voltage CMOS SRAM

64K X 16 bit

DESCRIPTION

BS616LV1012

• Wide Vcc operation voltage : 2.4 ~ 3.6V

• Very low power consumption :

Vcc = 3.0V C-grade : 22mA (@55ns) operating current

I- grade : 23mA (@55ns) operating current

C-grade : 17mA (@70ns) operating current

I- grade : 18mA (@70ns) operating current

0.4uA (Typ.) CMOS standby current

• High speed access time :

-55

55ns

-70

70ns

• Automatic power down when chip is deselected

• Three state outputs and TTL compatible

• Fully static operation

• Data retention supply voltage as low as 1.5V

• Easy expansion with CE and OE options

• I/O Configuration x8/x16 selectable by LB and UB pin

The BS616LV1012 is a high performance, very low power CMOS Static

Random Access Memory organized as 65,536 words by 16 bits and

operates from a wide range of 2.4V to 3.6V supply voltage.

Advanced CMOS technology and circuit techniques provide both high

speed and low power features with a typical CMOS standby current

of 0.4uA at 3V/25

C and maximum access time of 55ns at 3V/85

Easy memory expansion is provided by an active LOW chip

enable(CE) and active LOW output enable(OE) and three-state output

drivers.

The BS616LV1012 has an automatic power down feature, reducing the

power consumption significantly when chip is deselected.

The BS616LV1012 is available in the JEDEC standard 44-pin TSOP

Type II and 48-pin BGA package.

PRODUCT FAMILY

PRODUCT

FAMILY

BS616LV1012EC

BS616LV1012AC

BS616LV1012EI

BS616LV1012AI

OPERATING

TEMPERATURE

Vcc

RANGE

SPEED

(ns)

55ns:2.8~3.6V

70ns:2.5~3.6V

POWER DISSIPATION

STANDBY

Operating

CCSB1

, Max)

PKG TYPE

Vcc=3.0V

55ns

Vcc=3.0V

70ns

+0 C to +70 C

2.4V ~ 3.6V

55/70

1.3uA

22mA

17mA

TSOP2-44

BGA-48-0608

TSOP2-44

BGA-48-0608

-40 C to +85 C

2.4V ~ 3.6V

55/70

2.5uA

23mA

18mA

PIN CONFIGURATIONS

DQ0

DQ1

DQ2

DQ3

VCC

GND

DQ4

DQ5

DQ6

DQ7

A15

A14

A13

A12

DQ15

DQ14

DQ13

DQ12

GND

VCC

DQ11

DQ10

DQ9

DQ8

A10

A11

BLOCK DIAGRAM

BS616LV1012EC

BS616LV1012EI

A13

A15

A14

A12

Address

Input

Buffer

Row

Decoder

512

Memory Array

512 x 2048

2048

DQ0

Data

Input

Buffer

Column I/O

DQ15

Write Driver

Sense Amp

128

Column Decoder

Data

Output

Buffer

IO8

IO0

IO9

IO10

IO1

IO2

Control

Address Input Buffer

VSS

IO11

IO3

VCC

IO12

IO4

VSS

A11 A9 A3 A2 A1 A0 A10

IO14

IO13

A14

A15

IO5

IO6

Vcc

Gnd

IO15

A12

A13

IO7

A10

A11

Brilliance Semiconductor, Inc

reserves the right to modify document contents without notice.

R0201-BS616LV1012

Revision 1.0

Apr.

2004

BS616LV1012AI55 Related Products

	BS616LV1012AI55	BS616LV1012AC55	BS616LV1012AI70	BS616LV1012EC70	BS616LV1012EI70
Description	Standard SRAM, 64KX16, 55ns, CMOS, PBGA48	Standard SRAM, 64KX16, 55ns, CMOS, PBGA48	Standard SRAM, 64KX16, 70ns, CMOS, PBGA48	Standard SRAM, 64KX16, 70ns, CMOS, PDSO44	Standard SRAM, 64KX16, 70ns, CMOS, PDSO44
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Brilliance	Brilliance	Brilliance	Brilliance	Brilliance
package instruction	FBGA, BGA48,6X8,30	FBGA, BGA48,6X8,30	FBGA, BGA48,6X8,30	TSOP, TSOP44,.46,32	TSOP, TSOP44,.46,32
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum access time	55 ns	55 ns	70 ns	70 ns	70 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PBGA-B48	R-PBGA-B48	R-PBGA-B48	R-PDSO-G44	R-PDSO-G44
JESD-609 code	e0	e0	e0	e0	e0
memory density	1048576 bit	1048576 bit	1048576 bit	1048576 bit	1048576 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16	16
Humidity sensitivity level	3	3	3	3	3
Number of terminals	48	48	48	44	44
word count	65536 words	65536 words	65536 words	65536 words	65536 words
character code	64000	64000	64000	64000	64000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	70 °C	85 °C	70 °C	85 °C
Minimum operating temperature	-40 °C	-	-40 °C	-	-40 °C
organize	64KX16	64KX16	64KX16	64KX16	64KX16
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	FBGA	FBGA	FBGA	TSOP	TSOP
Encapsulate equivalent code	BGA48,6X8,30	BGA48,6X8,30	BGA48,6X8,30	TSOP44,.46,32	TSOP44,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	GRID ARRAY, FINE PITCH	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	240	240	240	240	240
power supply	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V	2.5/3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	8e-7 A	4.5e-7 A	8e-7 A	4.5e-7 A	8e-7 A
Minimum standby current	1.5 V	1.5 V	1.5 V	1.5 V	1.5 V
Maximum slew rate	0.023 mA	0.022 mA	0.018 mA	0.017 mA	0.018 mA
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	COMMERCIAL	INDUSTRIAL	COMMERCIAL	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	BALL	BALL	BALL	GULL WING	GULL WING
Terminal pitch	0.75 mm	0.75 mm	0.75 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Base Number Matches	1	1	1	1	1

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