Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
FEATURES
• Low forward volt drop
• Low Forward recovery voltage
• Fast switching
• Soft recovery characteristic
• High thermal cycling performance
• Isolated mounting tab
BY479X-1700
SYMBOL
QUICK REFERENCE DATA
V
R
= 1700 V
V
F
≤
1.2 V
V
fr
≤
19 V
I
FWM
= 10 A
I
FRM
≤
100 A
t
fr
≤
300 ns
k
1
a
2
GENERAL DESCRIPTION
Glass-passivated double diffused
rectifier diode featuring fast forward
recovery and low forward recovery
voltage. The device is intended for
use in multi-sync monitor deflection
circuits up to 64kHz. The device is
designed to withstand transient
reverse voltages up to 1700V.
The BY479X series is supplied in
the conventional leaded SOD113
package.
PINNING
PIN
1
2
tab
DESCRIPTION
cathode
anode
isolated
SOD113
case
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
RSM
V
RRM
V
RWM
I
FWM
I
FRM
I
FSM
PARAMETER
Peak non-repetitive reverse
voltage during flash-over of
picture tube
Peak repetitive reverse voltage
Crest working reverse voltage
Peak working forward current
1
Peak repetitive forward current
Peak non-repetitive forward
current
Storage temperature
Operating junction temperature
CONDITIONS
MIN.
-
t = 3.5
µs;
f = 64kHz
f = 64kHz; T
hs
≤
126 ˚C
t = 100
µs
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 150 ˚C prior to
surge; with reapplied V
RWM(max)
-
-
-
-
-
-
-40
-
MAX.
1700
1700
1300
10
100
100
110
150
150
UNIT
V
V
V
A
A
A
A
˚C
˚C
T
stg
T
j
1
Including worst case forward recovery losses, see fig:5.
September 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
R.M.S. isolation voltage from
both terminals to external
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
≤
65% ; clean and dustfree
MIN.
-
BY479X-1700
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from both terminals f = 1 MHz
to external heatsink
-
10
-
pF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
without heatsink compound
in free air
MIN.
-
-
-
TYP.
-
-
55
MAX.
4.8
5.9
-
UNIT
K/W
K/W
K/W
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
F
I
R
PARAMETER
Forward voltage
Reverse current
CONDITIONS
I
F
= 6.5 A
I
F
= 6.5 A; T
j
= 125 ˚C
V
R
= V
RWMmax
V
R
= V
RWMmax
; T
j
= 125 ˚C
MIN.
-
-
-
-
TYP.
0.95
0.85
-
-
MAX.
1.3
1.2
0.25
1.0
UNIT
V
V
mA
mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL
V
fr
t
fr
t
rr
Q
s
PARAMETER
Forward recovery voltage
Forward recovery time
Reverse recovery time
Reverse recovery charge
CONDITIONS
I
F
= 6.5 A; dI
F
/dt = 50 A/µs
I
F
= 6.5 A; dI
F
/dt = 50 A/µs; V
F
= 5 V
I
F
= 6.5 A; dI
F
/dt = 50 A/µs; V
F
= 2 V
I
F
= 1 A; -dI
F
/dt = 50 A/µs; V
R
≥
30 V
I
F
= 2 A; -dI
F
/dt = 20 A/µs; V
R
≥
30 V
MIN.
-
-
-
-
-
TYP.
12
200
400
250
2.0
MAX.
19
300
-
350
3.0
UNIT
V
ns
ns
ns
µC
September 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
I
F
100
Maximum pulse width / us
V
BY479X-1700
VRRM
10%
tfr
VF
V
VF
5V / 2V
time
fr
1
10
pulse
width tp
time
period T
time
10
100
line frequency / kHz
Fig.1. Definition of Vfr and tfr
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
I
dI
F
dt
F
6
5
Ptot / W
IF
IFWM
BY479X
Ths / C
121.2
trr
time
4
3
2
ton
time
130.8
f = 64 kHz
140.4
Qs
25%
100%
1
I
R
0
0
2
4
IFWM / A
6
8
150
10
Fig.2. Definition of t
rr
and Q
s
Fig.5. Total dissipation P
tot
= f(I
FWM
); including forward
recovery losses; Basic horizontal deflection circuit.
VCC
30
IF / A
Tj = 125 C
Tj = 25 C
BY459
20
Line output transformer
LY
10
typ
max
Cf
deflection transistor
D1
Cs
0
0
0.5
1
VF / V
1.5
2
Fig.3. Basic horizontal deflection circuit.
Fig.6. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
September 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
BY479X-1700
30
Vfr / V
max
BY479
10
Transient thermal impedance, Zth j-hs (K/W)
1
20
typ
0.1
10
0.01
P
D
t
p
D=
t
p
T
t
0
0
50
100
dIF/dt (A/us)
150
200
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BY459F
10s
Fig.7. Typical and maximum V
fr
= f(dI
F
/dt); I
F
= 6.5A;
T
j
= 25˚C
Fig.9. Transient thermal impedance Z
th
= f(t
p
)
2
trr / us
IF = 10 A
5A
BY459
1.5
2A
1A
1
0.5
0
1
10
-dIF/dt (A/us)
100
Fig.8. Maximum reverse recovery time t
rr
= f(dI
F
/dt);
parameter T
j
; V
R
≥
30V
September 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Damper diode
fast, high-voltage
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3.2
3.0
10.3
max
BY479X-1700
4.6
max
2.9 max
Recesses (2x)
2.5
0.8 max. depth
2.8
6.4
15.8
19
max. max.
seating
plane
15.8
max
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
M
2
1.0 (2x)
0.6
2.54
5.08
0.5
2.5
0.9
0.7
Fig.10. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1998
5
Rev 1.200
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