EEWORLDEEWORLDEEWORLD

Part Number

Search

CDLL0.5A30

Description
Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2
CategoryDiscrete semiconductor    diode   
File Size69KB,2 Pages
ManufacturerCompensated Devices Inc.
Download Datasheet Parametric Compare View All

CDLL0.5A30 Overview

Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2

CDLL0.5A30 Parametric

Parameter NameAttribute value
MakerCompensated Devices Inc.
package instructionHERMETIC SEALED, GLASS, LL34, MELF-2
Reach Compliance Codeunknown
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Minimum operating temperature-65 °C
Maximum output current0.5 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTIN LEAD
Terminal formWRAP AROUND
Terminal locationEND
Base Number Matches1
• 1N6677UR-1 AVAILABLE IN
JAN, JANTX, JANTXV AND JANS
PER MIL-PRF-19500/610
• 0.2 & 0.5 AMP SCHOTTKY BARRIER RECTIFIERS
• HERMETICALLY SEALED
•LEADLESS PACKAGE FOR SURFACE MOUNT
• METALLURGICALLY BONDED
• DOUBLE PLUG CONSTRUCTION
1N6677UR-1
and
CDLL6675 thru CDLL6677
and
CDLL0.2A20
thru
40
and
CDLL0.5A20 thru 40
MAXIMUM RATINGS, 0.2 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.2 AMP @ TEC = +100°C
Derating: 8.0 mA / °C above +100°C
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
CDLL6675
CDLL6676
CDLL6677
CDLL0.2A20
CDLL0.2A30
CDLL0.2A40
20
30
40
20
30
40
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
IR @ +25°C
IR @ +100°C
mA
0.6
0.6
0.6
0.6
0.6
0.6
MAXIMUM
CAPACITANCE @
VR = 0 VOLTS
f =1.0 MHz
CT
PICO FARADS
50
50
50
50
50
50
MAXIMUM FORWARD VOLTAGE
VF @ 20 mA VF @ 200 mA VF @ 630 mA
VOLTS
0.37
0.37
0.37
0.37
0.37
0.37
VOLTS
0.50
0.50
0.50
0.50
0.50
0.50
VOLTS
0.70
0.70
0.70
0.70
0.70
0.70
µ
A
5.0
5.0
5.0
5.0
5.0
5.0
DIM
D
F
G
G1
S
MILLIMETERS
INCHES
MIN MAX MIN MAX
1.60
1.70 0.063 0.067
0.41
0.55 0.016 0.022
3.30
3.70 .130 .146
2.54 REF.
.100 REF.
0.03 MIN.
.001 MIN.
FIGURE 1
DESIGN DATA
MAXIMUM RATINGS, 0.5 AMP DEVICES
Operating Temperature: -65°C to +125°C
Storage Temperature: -65°C to +150°C
Average Rectified Forward Current: 0.5 AMP @ TEC = +75°C
Derating: 6.67 mA / °C above TEC = +75°C
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified.
MAXIMUM
CAPACITANCE @
VR = 0 VOLTS
f =1.0 MHz
CT
PICO FARADS
50
50
50
CASE:
DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
100 ˚C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (Z
JX): 20
˚C/W maximum
POLARITY:
Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
CDI
TYPE
NUMBER
WORKING PEAK
REVERSE
VOLTAGE
VRWM
VOLTS
MAXIMUM
FORWARD VOLTAGE
VF @ 0.1A
VOLTS
0.50
0.50
0.50
VF @ 0.5A
VOLTS
0.65
0.65
0.65
MAXIMUM REVERSE
LEAKAGE CURRENT
AT RATED VOLTAGE
IR @ +25°C
IR @ +100°C
mA
1.0
1.0
1.0
µ
A
10.0
10.0
10.0
CDLL0.5A20
CDLL0.5A30
CDLL0.5A40
20
30
40
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com

CDLL0.5A30 Related Products

CDLL0.5A30 CDLL0.2A40 CDLL0.2A30 CDLL0.5A20 CDLL0.2A20 CDLL0.5A40
Description Rectifier Diode, Schottky, 1 Element, 0.5A, 30V V(RRM), Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2 Rectifier Diode, Schottky, 1 Element, 0.2A, 40V V(RRM), Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2 Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2 Rectifier Diode, Schottky, 1 Element, 0.5A, 20V V(RRM), Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2 Rectifier Diode, Schottky, 1 Element, 0.2A, 20V V(RRM), Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2 Rectifier Diode, Schottky, 1 Element, 0.5A, 40V V(RRM), Silicon, DO-213AA, HERMETIC SEALED, GLASS, LL34, MELF-2
package instruction HERMETIC SEALED, GLASS, LL34, MELF-2 HERMETIC SEALED, GLASS, LL34, MELF-2 HERMETIC SEALED, GLASS, LL34, MELF-2 HERMETIC SEALED, GLASS, LL34, MELF-2 HERMETIC SEALED, GLASS, LL34, MELF-2 HERMETIC SEALED, GLASS, LL34, MELF-2
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Other features METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED METALLURGICALLY BONDED
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-213AA DO-213AA DO-213AA DO-213AA DO-213AA DO-213AA
JESD-30 code O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2 O-LELF-R2
JESD-609 code e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C -65 °C -65 °C
Maximum output current 0.5 A 0.2 A 0.2 A 0.5 A 0.2 A 0.5 A
Package body material GLASS GLASS GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 30 V 40 V 30 V 20 V 20 V 40 V
surface mount YES YES YES YES YES YES
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND WRAP AROUND
Terminal location END END END END END END
Base Number Matches 1 1 1 1 1 1
Maker Compensated Devices Inc. Compensated Devices Inc. Compensated Devices Inc. Compensated Devices Inc. - -

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1048  2861  1929  48  2820  22  58  39  1  57 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号