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MT28C128532W30DFW-F706P70KBBWT

Description
Memory Circuit, 4MX16, CMOS, PBGA77, FBGA-77
Categorystorage    storage   
File Size158KB,15 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Download Datasheet Parametric View All

MT28C128532W30DFW-F706P70KBBWT Overview

Memory Circuit, 4MX16, CMOS, PBGA77, FBGA-77

MT28C128532W30DFW-F706P70KBBWT Parametric

Parameter NameAttribute value
MakerMicron Technology
Parts packaging codeBGA
package instructionLFBGA,
Contacts77
Reach Compliance Codeunknown
Other featuresCELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 4M X 16 FLASH
JESD-30 codeR-PBGA-B77
JESD-609 codee1
length10 mm
memory density67108864 bit
Memory IC TypeMEMORY CIRCUIT
memory width16
Number of functions1
Number of terminals77
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-25 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeLFBGA
Package shapeRECTANGULAR
Package formGRID ARRAY, LOW PROFILE, FINE PITCH
Certification statusNot Qualified
Maximum seat height1.4 mm
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.7 V
surface mountYES
technologyCMOS
Temperature levelOTHER
Terminal surfaceTIN SILVER COPPER
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
width8 mm
Base Number Matches1
PRELIMINARY
128Mb MULTIBANK BURST FLASH
32Mb/64Mb ASYNC/PAGE CellularRAM COMBO
FLASH AND CellularRAM
COMBO MEMORY
Features
Stacked die Combo package
• Includes two 64Mb Flash devices
• Choice of either one 32Mb or one 64Mb
CellularRAM
Ô
device
Basic configuration
Flash
• Flexible multibank architecture
• 4 Meg x 16 Async/Page/Burst interface
• Support for true concurrent operations with no
latency
CellularRAM
• Low-power, high-density design
• 2 Meg x 16 or 4 Meg x 16 configurations
• Async/Page
F_V
CC
, V
CC
Q, F_V
PP
, C_V
CC
voltages
• 1.70V (MIN)/1.95V (MAX) F_V
CC
, C_V
CC
• 1.70V (MIN)/2.24V (MAX) V
CC
Q (W18)
• 2.20V (MIN)/3.30V (MAX) V
CC
Q (W30)
• 1.80V (TYP) F_V
PP
(in-system PROGRAM/ERASE)
• 12V ±5% (HV) F_V
PP
Fast programming Algorithm (FPA) for in-factory
PROGRAM operation
Enhanced suspend options
• ERASE-SUSPEND-to-READ within same bank
• PROGRAM-SUSPEND-to-READ within same
bank
• ERASE-SUSPEND-to-PROGRAM within same
bank
Each Flash contains two 64-bit chip protection
registers for security purposes
Flash PROGRAM/ERASE cycles
• 100,000 WRITE/ERASE cycles per block
Cross-compatible command set support
• Extended command set
• Common Flash interface (CFI) compliant
Manufacturer’s Identification Code (ManID)
Micron
®
Intel
®
MT28C128532W18/W30D
MT28C128564W18/W30D
Low Voltage, Wireless Temperature
Figure 1: 77-Ball FBGA
1
A
B
C
D
E
F
G
H
J
K
A4
2
A18
3
A19
4
C_VSS
5
F_VCC
6
F_VCC
7
A21
8
A11
A5
C_LB#
C_VSS
NC
F_CLK
RFU
A12
A3
A17
F_VPP
C_WE#
C_CE#
A9
A13
A2
A7
F_WP#
F_ADV#
A20
A10
A15
A1
A6
C_UB#
F_RST#
F_WE#
A8
A14
A16
A0
DQ8
DQ2
DQ10
DQ5
DQ13
F_WAIT#
F_CE2#
C_OE#
DQ0
DQ1
DQ3
DQ12
DQ14
DQ7
F_OE2#
NC
F_OE1#
DQ9
DQ11
DQ4
DQ6
DQ15
VCCQ
F_CE1#
NC
NC
NC
C_VCC
F_VCC
VCCQ
C_ZZ#
C_VSS
VSSQ
VCCQ
F_VCC
C_VSS
VSSQ
F_VSS
C_VSS
Top View
(Ball Down)
Options
Flash Timing
• 60ns (W18)
1
• 70ns (W18/W30)
Flash Burst Frequency
• 66 MHz
1
• 54 MHz
Flash Boot Block Configuration
• Top/Top
• Top/Bottom
• Bottom/Top
• Bottom/Bottom
CellularRAM Timing
• 70ns
• 85ns
I/O Voltage Range
• VccQ 1.70V–2.24V (W18)
• VccQ 2.20V–3.30V (W30)
Manufacturer’s Identification Code (ManID)
• Micron (0x2Ch)
• Intel (0x89h)
Operating Temperature Range
• Wireless Temperature (-25°C to +85°C)
Package
• 77-ball FBGA (Standard) 8 x 10 grid
• 77-ball FBGA (Lead-free) 8 x 10 grid
2
NOTE:
1. Contact factory for availability.
2. Contact factory for details.
09005aef80b10a55
MT28C128564W18D_C.fm - Rev. C, Pub 10/03 EN
1
©2003 Micron Technology, Inc. All rights reserved.
PRODUCTS
AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.
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