MUR120
Vishay General Semiconductor
Ultrafast Plastic Rectifier
Major Ratings and Characteristics
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
j
max.
1.0 A
200 V
35 A
25 ns
0.710 V
175 °C
DO-204AC (DO-15)
Features
•
•
•
•
•
•
•
Glass passivated chip junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-204AC (DO-15)
Epoxy meets UL-94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converters and
inverters for consumer, computer and Telecommuni-
cation
Maximum Ratings
T
A
= 25 °C unless otherwise specified
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
A
= 130 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
MUR120
200
200
200
1.0
35
- 65 to + 175
Unit
V
V
V
A
A
°C
Document Number 88683
21-Jul-05
www.vishay.com
1
MUR120
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Maximum instantaneous
forward voltage
(1)
Maximum instantaneous
reverse current at rated DC
blocking voltage
(1)
Maximum reverse recovery
time
Maximum reverse recovery
time
Maximum forward recovery
time
Notes:
(1) Pulse test: t
p
= 300 µs pulse, duty cycle
≤
2 %
at 1.0 A,
at 1.0 A,
Test condition
T
J
= 25 °C
T
J
= 150 °C
T
J
= 25 °C
T
J
= 150 °C
at I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
at I
F
= 1.0 A, di/dt = 50 A/µs, V
R
= 30 V,
I
rr
= 10 % I
RM
at I
F
= 1.0 A, di/dt = 100 A/µs, Irec to 1.0 V
Symbol
V
F
I
R
MUR120
0.875
0.710
2.0
50
25
35
25
Unit
V
µA
t
rr
t
rr
t
fr
ns
ns
ns
Thermal Characteristics
T
A
= 25 °C unless otherwise specified
Parameter
Typical Thermal Resistance Junction to Ambient
Notes:
(1) Lead length = 3/8" on P.C. Board with 1.5" x 1.5" copper surface
(1)
Symbol
R
θJA
MUR120
27
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise noted)
3.0
50
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
0
25
50
75
100
125
150
175
40
2.0
30
20
1.0
10
0
0
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88683
21-Jul-05
MUR120
Vishay General Semiconductor
80
1000
Instantaneous Forward Current (A)
10
T
J
= 175°C
T
J
= 100°C
1
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0 MHz
Vsig = 50mV
p-p
100
0.1
T
J
= 25°C
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
Instantaneous Reverse Leakage Current
(µA)
100
10
T
J
= 175°C
1
T
J
= 100°C
0.1
0.01
T
J
= 25°C
0.001
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
Package outline dimensions in inches (millimeters)
DO-204AC (DO-15)
0.034 (0.86)
0.028 (0.71)
Dia.
1.0 (25.4)
min.
0.300 (7.6)
0.230 (5.8)
0.140 (3.6)
0.104 (2.6)
Dia.
1.0 (25.4)
min.
Document Number 88683
21-Jul-05
www.vishay.com
3
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