02015J4R7BAWTR datasheet, PDF - EEWORLD Datasheet

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02015J4R7BAWTR: DescriptionCAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000047 uF, SURFACE MOUNT, 0402; CategoryPassive components; File Size168KB，19 Pages; ManufacturerAVX

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02015J4R7BAWTR Overview

CAPACITOR, FILM/FOIL, SILICON DIOXIDE AND NITRIDE, 25 V, 0.0000047 uF, SURFACE MOUNT, 0402

02015J4R7BAWTR Parametric

Parameter Name	Attribute value
negative deviation	2.13 %
Minimum operating temperature	-55 Cel
Maximum operating temperature	125 Cel
positive deviation	2.13 %
Rated DC voltage urdc	25 V
Processing package description	CHIP, ROHS COMPLIANT
each_compli	Yes
EU RoHS regulations	Yes
China RoHS regulations	Yes
state	Active
Capacitor type	FILM CAPACITOR
capacitance	4.70E-6 µF
dielectric materials	SILICON DIOXIDE AND NITRIDE
jesd_609_code	e3
Manufacturer Series	ACCU-P
Installation features	SURFACE MOUNT
packaging shape	RECTANGULAR PACKAGE
Package Size	SMT
cking_method	TR, 7/13 INCH
series	SIZE(ACCU-P)
size code	0402
Temperature Coefficient	-/+30ppm/Cel
terminal coating	MATTE TIN OVER NICKEL
Terminal shape	WRAPAROUND
heigh	0.4000 mm
length	1 mm
width	0.5500 mm
dditional_feature	CAPACITANCE TOLERANCE IS 0.1 PICO FARAD

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Accu-F

/ Accu-P

Thin-Film Technology

THE IDEAL CAPACITOR

The non-ideal characteristics of a real capacitor can be

ignored at low frequencies. Physical size imparts inductance

to the capacitor and dielectric and metal electrodes result in

resistive losses, but these often are of negligible effect on the

circuit. At the very high frequencies of radio communication

(>100MHz) and satellite systems (>1GHz), these effects

become important. Recognizing that a real capacitor will

exhibit inductive and resistive impedances in addition to

capacitance, the ideal capacitor for these high frequencies is

an ultra low loss component which can be fully characterized

in all parameters with total repeatability from unit to unit.

Until recently, most high frequency/microwave capacitors

were based on fired-ceramic (porcelain) technology. Layers

of ceramic dielectric material and metal alloy electrode paste

are interleaved and then sintered in a high temperature oven.

This technology exhibits component variability in dielectric

quality (losses, dielectric constant and insulation resistance),

variability in electrode conductivity and variability in physical

size (affecting inductance). An alternate thin-film technology

has been developed which virtually eliminates these vari-

ances. It is this technology which has been fully incorporated

into Accu-F

and Accu-P

to provide high frequency capaci-

tors exhibiting truly ideal characteristics.

The main features of Accu-F

and Accu-P

may be summa-

rized as follows:

• High purity of electrodes for very low and repeatable

ESR.

• Highly pure, low-K dielectric for high breakdown field,

high insulation resistance and low losses to frequencies

above 40GHz.

• Very tight dimensional control for uniform inductance,

unit to unit.

• Very tight capacitance tolerances for high frequency

signal applications.

This accuracy sets apart these Thin-Film capacitors from

ceramic capacitors so that the term Accu has been

employed as the designation for this series of devices, an

abbreviation for “accurate.”

THIN-FILM TECHNOLOGY

Thin-film technology is commonly used in producing semi-

conductor devices. In the last two decades, this technology

has developed tremendously, both in performance and in

process control. Today’s techniques enable line definitions of

below 1μm, and the controlling of thickness of layers at 100Å

(10

-2

μm). Applying this technology to the manufacture of

capacitors has enabled the development of components

where both electrical and physical properties can be tightly

controlled.

The thin-film production facilities at AVX consist of:

• Class 1000 clean rooms, with working areas under

laminar-flow hoods of class 100, (below 100 particles

per cubic foot larger than 0.5μm).

• High vacuum metal deposition systems for high-purity

electrode construction.

• Photolithography equipment for line definition down to

2.0μm accuracy.

• Plasma-enhanced CVD for various dielectric deposi-

tions (CVD=Chemical Vapor Deposition).

• High accuracy, microprocessor-controlled dicing saws

for chip separation.

• High speed, high accuracy sorting to ensure strict

tolerance adherence.

TERMINATION

ALUMINA

ELECTRODE

SEAL

ELECTRODE

DIELECTRIC

ALUMINA

ACCU-P

CAPACITOR

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