DH80050-BH301 datasheet, PDF - EEWORLD Datasheet

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DH80050-BH301: DescriptionSILICON, PIN DIODE, CERAMIC, 2 PIN; CategoryDiscrete semiconductor diode; File Size56KB，2 Pages; ManufacturerRakon Limited

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DH80050-BH301 Overview

SILICON, PIN DIODE, CERAMIC, 2 PIN

DH80050-BH301 Parametric

Parameter Name	Attribute value
Maker	Rakon Limited
package instruction	O-CEMW-N2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH VOLTAGE
application	SWITCHING
Shell connection	ISOLATED
Configuration	SINGLE
Maximum diode capacitance	0.4 pF
Diode component materials	SILICON
Maximum diode forward resistance	0.65 Ω
Diode type	PIN DIODE
frequency band	VERY HIGH FREQUENCY TO K BAND
JESD-30 code	O-CEMW-N2
Minority carrier nominal lifetime	1.5 µs
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-55 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	MICROWAVE
Certification status	Not Qualified
surface mount	YES
technology	POSITIVE-INTRINSIC-NEGATIVE
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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SILICON PIN DIODES

High voltage PIN diodes

SILICON PIN DIODES FOR SWITCHING & PHASE

SHIFTING APPLICATIONS (MEDIUM & HIGH POWER)

Description

This series of high power, high voltage PIN diodes incorporates ceramic-glass passivated mesa

technology. A broad range of products is available, in terms of breakdown voltages, junction

capacitances and series resistances, to suit a large variety of applications, from 1 MHz to several GHz.

These diodes are available in non-magnetic packages.

Electrical characteristics

CHIP DIODES

Characteristics

at 25°C

Chip

dimensions

Applicable

Break-

voltage down

V

R

V

BR

CHIP AND PACKAGED DIODES

Junction

Forward series

Minority

capacitance

resistance

carrier

Cj

(1)

R

SF

lifetime

τ

I

Test conditions

N/A

mm typ.

Gold dia per side

0.13

0.15

0.25

0.27

0.34

0.13

0.27

0.55

0.23

0.30

0.55

0.6

0.8

0.9

0.8

0.9

1.4

0.9

1.4

I < 10µA I < 10µA

V

min.

500

800

1000

V

typ.

550

850

1100

V

R

= 50 V

f = 1 MHz

pF

typ.

0.15

0.30

0.60

0.80

1.2

0.15

0.80

1.4

0.30

0.60

1.40

max

0.20

0.40

0.70

0.90

1.3

0.35

0.90

1.7

0.40

0.75

1.70

f = 120 MHz

I

F

AS SHOWN

MAX

I

F

= 10 mA

I

R

= 6mA

µ

S

min.

1.1

1.5

2.0

2.5

3.0

2.0

3.0

5.0

3.0

4.0

7.0

TYPE

EH80050

EH80051

EH80052

EH80053

EH80055

EH80080

EH80083

EH80086

EH80100

EH80102

EH80106

Ω

I

F

= 100 mA

0.70

0.60

0.40

0.30

0.25

0.80

0.40

0.35

0.70

0.40

0.35

I

F

= 200 mA

0.60

0.45

0.40

0.30

0.45

0.30

I

F

= 200 mA

0.60

0.35

0.50

0.35

0.20

I

F

= 200 mA

0.65

0.55

0.30

0.25

0.22

0.70

0.30

0.28

0.60

0.35

0.30

I

F

= 300 mA

0.55

0.35

0.30

0.25

0.35

0.25

I

F

= 300 mA

0.50

0.30

0.40

0.30

0.15

V

R

= 100V

EH80120

EH80124

EH80126

EH80129

EH80154

EH80159

0.25

0.65

0.75

1.25

0.65

1.25

0.9

1.5 H

(2)

1.7 H

(2)

2.2

1.5

2.2

1200

1500

1300

1600

0.30

1.00

1.40

2.00

1.00

2.00

0.40

1.20

1.70

2.30

1.20

2.30

6.0

10.0

12.0

15.0

10.0

15.0

V

R

= 200V

EH80182

EH80189

EH80204

EH80209

EH80210

(1)

(2)

12-18

Vol. 1

0.75

1.4

0.85

1.4

1.5

2.6 H

(2)

1.7

2.6 H

(2)

3 H

(2)

1800

2000

1900

2100

0.60

2.00

1.00

2.00

3.00

0.80

2.40

1.30

2.40

3.40

12.0

18.0

14.0

18.0

25.0

Other capacitance values available on request

Hexagonal chips (between opposite ﬂats)

SALES OFFICES: VISIT OUR WEB SITE AT

http://www.temex.com

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