ZM-PTZ3V6B ~ ZM-PTZ36B
SILICON EPITAXIAL PLANAR ZENER DIODES
LL-41
Features
•
Small surface mounting type
•
1 W of power can be obtained despite compact size
•
High surge withstand level
Applications
•
Voltage regulation and voltage limiting
•
Voltage surge absorption
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Power Dissipation
1)
Junction Temperature
Storage Temperature Range
1)
Symbol
P
tot
T
j
T
S
Value
1
150
- 55 to + 150
Unit
W
O
C
C
O
Mounting density of other power components should be taken into consideration when laying out the pattern.
Zener Voltage Range
Type
ZM-PTZ3V6B
ZM-PTZ3V9B
ZM-PTZ4V3B
ZM-PTZ4V7B
ZM-PTZ5V1B
ZM-PTZ5V6B
ZM-PTZ6V2B
ZM-PTZ6V8B
ZM-PTZ7V5B
ZM-PTZ8V2B
ZM-PTZ9V1B
ZM-PTZ10B
ZM-PTZ11B
ZM-PTZ12B
ZM-PTZ13B
ZM-PTZ15B
ZM-PTZ16B
ZM-PTZ18B
ZM-PTZ20B
ZM-PTZ22B
ZM-PTZ24B
ZM-PTZ27B
ZM-PTZ30B
ZM-PTZ33B
ZM-PTZ36B
Min.
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13.3
14.7
16.2
18
20
22
24
27
30
33
36
Vz (V)
Max.
4
4.4
4.8
5.2
5.7
6.3
7
7.7
8.4
9.3
10.2
11.2
12.3
13.5
15
16.5
18.3
20.3
22.4
24.5
27.6
30.8
34
37
40
I
Z
(mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Operating Resistance
Zz (Ω)
Max.
15
15
15
10
8
8
6
6
4
4
6
6
8
8
10
10
12
12
14
14
16
16
18
18
20
I
Z
(mA)
40
40
40
40
40
40
40
40
40
40
40
40
20
20
20
20
20
20
20
10
10
10
10
10
10
Max.
20
20
20
20
20
20
20
20
20
20
20
10
10
10
10
10
10
10
10
10
10
10
10
10
10
Reverse current
I
R
(uA)
V
R
(V)
1
1
1
1
1
1.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
1)
2)
Tested with pulses tp = 20 ms.
The operating resistances (Z
Z
, Z
ZK
) are measured by superimposing a minute alternating current on the regulated current
(Iz).
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/05/2006
ZM-PTZ3V6B ~ ZM-PTZ36B
Derating curve
1200
Glass epoxy substrate
32x30x1.6(mm)
200
Rise in surface temperature
ALUMINA SUBSTRATE
114X124X1.6(mm)
200
Rise in surface temperature
Power dissipation
(mW)
Rise
in diode a surface
temperature
( C)
1.5W
Rise
in diode a surface
temperature
( C)
1.5W
1W
800
Ceramic substrate
82x30x1.0(mm)
100
1W
100
0.5W
400
Individual part
(not mounted)
0.5W
0
50
87.5 100
150
200
1
10
100
0
1
GLASS EPOXY SUBSTRATE
144X220X1.6(mm)
10
100
0
T
a
( C)
Mounting quantity(pcs/substrate)
Mounting quantity(pcs/substrate)
0.10
Zener voltage - temp.
coefficient characteristics
Iz=20mA
Iz=40mA
Zener voltage characteristics
100m
4.3 4.7 5.1
10m
3.9
3.6
5.6 6.2 6.8 7.5 8.2 9.1 10
12
11
13
15 16
18
20
22
Temperature coefficient (%/ C)
0.08
24
27
30
33
36
0.04
Zener current,
(A)
125-25 C
0
1m
0
100
-0.04
10
-0.08
10
20
30
40
1
0
5
10
15
20
25
30
35
40
Zener voltage (V)
Zener voltage (V)
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 07/05/2006
Embedded System
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