VWO35-12HO7
Thyristor Module
V
RRM
I
TAV
V
T
=
=
=
1200 V
16 A
1.19 V
AC Controlling
3~ full-controlled
Part number
VWO35-12HO7
Backside: isolated
H
A
J
C
M
F
I
B
L
E
N
G
Features / Advantages:
●
Thyristor for line frequency
●
Planar passivated chip
●
Long-term stability
●
Direct Copper Bonded Al2O3-ceramic
Applications:
●
Line rectifying 50/60 Hz
●
Softstart AC motor control
●
DC Motor control
●
Power converter
●
AC power control
●
Lighting and temperature control
Package:
ECO-PAC1
●
Isolation Voltage: 3000 V~
●
Industry standard outline
●
RoHS compliant
●
Soldering pins for PCB mounting
●
Height: 9 mm
●
Base plate: DCB ceramic
●
Reduced weight
●
Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160909a
© 2016 IXYS all rights reserved
VWO35-12HO7
Rectifier
Symbol
V
RSM/DSM
V
RRM/DRM
I
R/D
V
T
Definition
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 125 °C
T
VJ
= 125 °C
min.
max. non-repetitive reverse/forward blocking voltage
max. repetitive reverse/forward blocking voltage
reverse current, drain current
forward voltage drop
Ratings
typ.
max. Unit
1300
V
1200
50
2
1.23
1.48
1.19
1.51
16
35
0.88
21
0.500
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 125 °C
V
R
= 0 V
T
VJ
= 25°C
T
C
= 125 °C
7
5
2.5
0.5
T
VJ
= 125 °C; f = 50 Hz
repetitive, I
T
=
t
P
= 200 µs; di
G
/dt = 0.15 A/µs;
I
G
= 0.15 A; V =
⅔
V
DRM
non-repet., I
T
=
V =
⅔
V
DRM
R
GK
=
∞; method 1 (linear voltage rise)
V
D
= 6 V
V
D
= 6 V
V
D
=
⅔
V
DRM
t
p
=
I
G
=
10 µs
0.1 A; di
G
/dt =
0.1 A/µs
T
VJ
= 25 °C
T
VJ
= 25 °C
0.1 A/µs
150
µs
20 V/µs t
p
= 200 µs
50
2
mA
µs
45 A
15 A
77
200
215
170
185
200
190
145
140
V
µA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
A
A
A
A
A²s
A²s
A²s
A²s
pF
W
W
W
V
R/D
= 1200 V
V
R/D
= 1200 V
I
T
=
I
T
=
I
T
=
I
T
=
15 A
30 A
15 A
30 A
I
TAV
I
RMS
V
T0
r
T
R
thJC
R
thCH
P
tot
I
TSM
average forward current
RMS forward current per phase
threshold voltage
slope resistance
T
C
= 85 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
1.3 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
C
J
P
GM
P
GAV
(di/dt)
cr
junction capacitance
max. gate power dissipation
V
R
= 400 V f = 1 MHz
t
P
= 30 µs
t
P
= 300 µs
average gate power dissipation
critical rate of rise of current
100 A/µs
500 A/µs
500 V/µs
1.5
2.5
25
50
0.2
3
75
V
V
mA
mA
V
mA
mA
(dv/dt)
cr
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
critical rate of rise of voltage
T
VJ
= 125°C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 25 °C
T
VJ
= -40 °C
T
VJ
= 125°C
T
VJ
= 25 °C
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
latching current
holding current
gate controlled delay time
V
D
= 6 V R
GK
=
∞
V
D
= ½ V
DRM
I
G
=
0.1 A; di
G
/dt =
turn-off time
V
R
= 100 V; I
T
= 15 A; V =
⅔
V
DRM
T
VJ
=100 °C
di/dt = 10 A/µs dv/dt =
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160909a
© 2016 IXYS all rights reserved
VWO35-12HO7
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
ECO-PAC1
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
40
125
100
125
Unit
A
°C
°C
°C
g
Nm
mm
mm
V
V
19
1.4
6.0
10.0
3000
2500
2
Logo
YYCW Lot#
XXX XX-XXXXX
Circuit Diagram
Part Number
Date Code
Ordering
Standard
Ordering Number
VWO35-12HO7
Marking on Product
VWO35-12HO7
Delivery Mode
Box
Quantity
25
Code No.
479667
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Thyristor
* on die level
T
VJ
= 125 °C
V
0 max
R
0 max
0.88
18
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20160909a
© 2016 IXYS all rights reserved
VWO35-12HO7
Outlines ECO-PAC1
Ø 1,5
2
8,7
±0,30
8,6
±0,30
8,6
±0,30
±0
,2
Ø4
39
8,6
±0,30
8,6
±0,30
8,7
±0,30
47
± 0,2
,3
H
A
J
C
M
F
I
B
L
E
N
G
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
10,80
±0,30
10,80
±0,30
30,30
±0,20
7,6
±0,30
7,6
±0,30
20,30
+0,50 / - 0,10
8
9
20160909a
© 2016 IXYS all rights reserved
VWO35-12HO7
Thyristor
50
200
300
40
T
VJ
= 45°C
200
I
F
30
[A]
20
T
VJ
= 125°C
T
VJ
= 25°C
I
FSM
[A]
It
100
T
VJ
= 125°C
2
T
VJ
= 45°C
[A s]
100
T
VJ
= 125°C
2
10
50Hz, 80% V
RRM
0
0.0
0.5
1.0
1.5
2.0
0
0.001
0
0.01
0.1
1
1
2
2
3
4 5 6 7 89
V
F
[V]
Fig. 1 Forward current vs.
voltage drop per thyristor
100
1000
t [s]
Fig. 2 Surge overload current
vs. time per thyristor
40
t [ms]
Fig. 3 I t vs. time per thyristor
1: I
GD
, T
VJ
= 125°C
2: I
GT
, T
VJ
= 25°C
3: I
GT
, T
VJ
= -40°C
6
T
VJ
= 25°C
typ.
Limit
30
10
5
4
3
100
V
G
[V]
1
1
2
t
gd
[μs]
10
I
T(AV)M
20
DC =
1
0.5
0.4
0.33
0.17
0.08
[A]
10
4: P
GAV
= 5 W
5: P
GM
= 2.5 W
6: P
GM
= 0.5 W
0.1
10
0
10
1
10
2
10
3
1
10
0
100
1000
0
50
100
150
I
G
[mA]
Fig. 4 Gate trigger characteristics
I
G
[mA]
Fig. 5 Gate trigger delay time
T
C
[°C]
Fig. 5 Max. forward current vs.
case temperature per thyristor
30
DC =
1
0.5
25
0.4
0.33
20
0.17
0.08
1.4
R
thHA
:
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
1.2
1.0
P
tot
[W]
Z
thJC
0.8
0.6
[K/W]
15
10
0.4
5
0
0
5
10
15
20
0
50
100
150
0.2
0.0
1
10
Constants for Z
thJC
calc.:
i
1
2
3
4
5
100
R
th
(K/W)
0.020
0.150
0.260
0.510
0.360
1000
t
i
(s)
0.0004
0.0100
0.0280
0.1200
0.4500
10000
I
T(AV)M
[A]
T
amb
[°C]
t [ms]
Fig. 6 Transient thermal impedance junction to case
vs. time per thyristor
Data according to IEC 60747and per semiconductor unless otherwise specified
20160909a
Fig. 4 Power dissipation vs. forward current
and ambient temperature per thyristor
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
京公网安备 11010802033920号
EEWORLD
