ZC933TA datasheet, PDF - EEWORLD Datasheet

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ZC933TA: DescriptionVHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size72KB，7 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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ZC933TA Overview

VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

ZC933TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	R-PDSO-G3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW NOISE
Minimum breakdown voltage	12 V
Configuration	SINGLE
Diode Capacitance Tolerance	20%
Minimum diode capacitance ratio	3.5
Nominal diode capacitance	22.5 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum power dissipation	0.33 W
Certification status	Not Qualified
minimum quality factor	150
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
Varactor Diode Classification	HYPERABRUPT

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ZC930, ZMV930 series

SILICON 12V HYPERABRUPT VARACTOR DIODES

Device Description

A range of silicon varactor diodes for use in

frequency control and filtering. Featuring closely

controlled CV characteristics and high Q. Low

reverse current ensures very low phase noise

performance. Available in single or dual common

cathode format in a wide rage of miniature surface

mount packages.

Features

•

Close tolerance C-V characteristics

•

Octave tuning from 0 to 6V

•

Low I

(typically 200pA)

•

Excellent phase noise performance

•

High Q

SOT23

SOD323

Applications

•

VCXO and TCXO

•

Wireless communications

•

Pagers

•

Mobile radio

ISSUE 10 - JUNE 2007

SEMICONDUCTORS

ZC933TA Related Products

	ZC933TA	ZC930	ZC930TA	ZC930_07	ZMV930	ZC933ATA	ZC932TA	ZC931TA
Description	VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	VHF BAND, 4.9 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	VHF BAND, 8.7 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	VHF BAND, 22.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
Is it Rohs certified?	conform to	conform to	conform to	-	conform to	conform to	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	-	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors	Zetex Semiconductors
package instruction	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G2	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
Reach Compliance Code	compli	compli	compli	-	unknow	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	-	EAR99	EAR99	EAR99	EAR99
Other features	LOW NOISE	HIGH RELIABILITY	LOW NOISE	-	LOW LEAKAGE CURRENT, HIGH RELIABILITY	LOW NOISE	LOW NOISE	LOW NOISE
Minimum breakdown voltage	12 V	12 V	12 V	-	12 V	12 V	12 V	12 V
Configuration	SINGLE	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE
Diode Capacitance Tolerance	20%	-	12.24%	-	-	10%	10.53%	9.09%
Minimum diode capacitance ratio	3.5	3	3	-	-	3.5	3.091	3.625
Nominal diode capacitance	22.5 pF	8.7 pF	4.9 pF	-	8.7 pF	22.5 pF	9.5 pF	7.15 pF
Diode component materials	SILICON	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	-	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY	VERY HIGH FREQUENCY
JESD-30 code	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3	-	R-PDSO-G2	R-PDSO-G3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3	e3	-	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	-	1	1	1	1
Number of components	1	1	1	-	1	1	1	1
Number of terminals	3	3	3	-	2	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	-	-	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-	-	-55 °C	-55 °C	-55 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	-	260	260	260	260
Maximum power dissipation	0.33 W	0.33 W	0.33 W	-	0.33 W	0.33 W	0.33 W	0.33 W
Certification status	Not Qualified	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
minimum quality factor	150	350	200	-	200	150	200	300
surface mount	YES	YES	YES	-	YES	YES	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	-	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING	GULL WING	-	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	-	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	40	40	40	-	40	40	40	40
Varactor Diode Classification	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	-	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT	HYPERABRUPT

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