VHF BAND, 22.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Zetex Semiconductors |
| package instruction | R-PDSO-G3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | LOW NOISE |
| Minimum breakdown voltage | 12 V |
| Configuration | SINGLE |
| Diode Capacitance Tolerance | 10% |
| Minimum diode capacitance ratio | 3.5 |
| Nominal diode capacitance | 22.5 pF |
| Diode component materials | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY |
| JESD-30 code | R-PDSO-G3 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Maximum power dissipation | 0.33 W |
| Certification status | Not Qualified |
| minimum quality factor | 150 |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 40 |
| Varactor Diode Classification | HYPERABRUPT |
| ZC933ATA | ZC930 | ZC930TA | ZC930_07 | ZMV930 | ZC933TA | ZC932TA | ZC931TA | |
|---|---|---|---|---|---|---|---|---|
| Description | VHF BAND, 22.5 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | VHF BAND, 4.9 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | VHF BAND, 8.7 pF, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE | VHF BAND, 12 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| Is it Rohs certified? | conform to | conform to | conform to | - | conform to | conform to | conform to | conform to |
| Maker | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | - | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors | Zetex Semiconductors |
| package instruction | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | - | R-PDSO-G2 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Reach Compliance Code | compli | compli | compli | - | unknow | compli | compli | compli |
| ECCN code | EAR99 | EAR99 | EAR99 | - | EAR99 | EAR99 | EAR99 | EAR99 |
| Other features | LOW NOISE | HIGH RELIABILITY | LOW NOISE | - | LOW LEAKAGE CURRENT, HIGH RELIABILITY | LOW NOISE | LOW NOISE | LOW NOISE |
| Minimum breakdown voltage | 12 V | 12 V | 12 V | - | 12 V | 12 V | 12 V | 12 V |
| Configuration | SINGLE | SINGLE | SINGLE | - | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode Capacitance Tolerance | 10% | - | 12.24% | - | - | 20% | 10.53% | 9.09% |
| Minimum diode capacitance ratio | 3.5 | 3 | 3 | - | - | 3.5 | 3.091 | 3.625 |
| Nominal diode capacitance | 22.5 pF | 8.7 pF | 4.9 pF | - | 8.7 pF | 22.5 pF | 9.5 pF | 7.15 pF |
| Diode component materials | SILICON | SILICON | SILICON | - | SILICON | SILICON | SILICON | SILICON |
| Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | - | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
| frequency band | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY | - | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY | VERY HIGH FREQUENCY |
| JESD-30 code | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | - | R-PDSO-G2 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | e3 | e3 | e3 | - | e3 | e3 | e3 | e3 |
| Humidity sensitivity level | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 |
| Number of components | 1 | 1 | 1 | - | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | - | 2 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | - | - | 150 °C | 150 °C | 150 °C |
| Minimum operating temperature | -55 °C | -55 °C | -55 °C | - | - | -55 °C | -55 °C | -55 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | 260 | 260 | - | 260 | 260 | 260 | 260 |
| Maximum power dissipation | 0.33 W | 0.33 W | 0.33 W | - | 0.33 W | 0.33 W | 0.33 W | 0.33 W |
| Certification status | Not Qualified | Not Qualified | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| minimum quality factor | 150 | 350 | 200 | - | 200 | 150 | 200 | 300 |
| surface mount | YES | YES | YES | - | YES | YES | YES | YES |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | - | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING | GULL WING | - | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL | DUAL | - | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | 40 | 40 | 40 | - | 40 | 40 | 40 | 40 |
| Varactor Diode Classification | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | - | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT | HYPERABRUPT |
京公网安备 11010802033920号
EEWORLD
