Silicon Step Recovery Diodes
Description
The diodes feature fully passivated, true mesa construction for
sharp transitions and improved stability. The beam lead SRDs
have the industry’s fastest transition times for millimeter wave
multiplication and picosecond pulse forming.
Features
•
•
•
Output combs to 40+ GHz
Transition times down to 35 ps
Screening per MIL-PRF-19500
and MIL-PRF-38534 available
Absolute Maximum Ratings
(Chip and Beam Lead)
Parameters
Reverse Voltage
Forward Current
Rated V
BR
50 mA (Beam Lead)
150 mA (Chip)
Power Dissipation
150
°C
/
JC
Rating
at T
HSK
= +25
°C
Derate linearly to zero at T
HSK
= +175
°C
Junction Temperature
Storage Temperature
Mounting / Bonding Temperature
-65
°C
to +175
°C
-65
°C
to +175
°C
+235
°C
for 10 seconds (Beam Lead)
+310
°C
for 30 seconds (Chip)
Chip and Beam Lead
V
BR
C
J
MIN
pF
C
J
MAX
pF
MIN
ns
TYP
ns
t
t
TYP
ps
t
t
MAX
ps
F
CO
TYP
GHz
JC
Model
MMDB30-B1
1
MMDB35-B1
1
MMDB45-B1
1
MMD805-C1
2
MMD810-C1
2
MMD820-C1
2
MMD830-C1
1
MMD832-C1
1
MMD835-C1
1
MMD837-C1
1
MMD840-C1
1
MIN
V
MAX
°C/W
Package
B1
1
B1
1
B1
1
C1
2
C1
2
C1
2
C1
1
C1
1
C1
1
C1
1
C1
1
1
4
16
25
60
50
40
25
20
1
5
20
1
5
I
R
=
10 A
0.1
5
0.1
3
0.1
1
2.5
1.5
1.0
0.5
0.4
0.3
0.2
0.2
0.25
0.20
0.20
3.5
2.5
1.7
1.0
0.8
0.7
0.4
0.4
1.0
1.0
3.0
80
40
30
1
5
10
10
5
7
4.0
4.0
8.0
100
70
60
30
1
5
20
10
1
5
30
35
45
250
200
80
60
60
60
60
60
I
F
= 3 mA
V
R
= 7 V
38
45
58
300
250
100
80
80
70
70
70
530
482
410
1
30
200
390
700
660
800
1,300
880
F
CO
=
1 / 2 R
S
600
600
600
1
5
22
25
45
50
60
60
60
I
F
= 10 mA
Test Conditions
V
R
= 6 V
F = 1 MHz
I
R
= 6 mA
Measured at
50% Recovery
I
F
= 10 mA
V
R
= 10 V
Revision Date: 09/23/05
Silicon Step Recovery Diodes
Transistion Time vs. Drive
150
810
= 86ns
100
t
t
(ps)
820
= 78ns
830
835
840
= 30ns
= 18ns
= 13ns
50
0
0
200
400
600
800
1000
1200
1400
1600 1800
Drive (pC)
Transistion Time vs. Forward Current
100
90
80
70
60
t
t
(ps)
MMDB35
50
40
30
20
10
0
0
1
2
3
4
5
I
F
(mA)
MMDB30
6
7
8
9
10
Absolute Maximum Ratings
(Ceramic Packaged)
Parameters
Reverse Voltage
Forward Current
Power DIssipation
Junction Temperature
Storage Temperatuire
Soldering Temperature
Rated VB
R
50 mA (MMDB)
150 mA (MMD)
See individual detailed data sheet
-65
°C
to +175
°C
-65
°C
to +175
°C
+260
°C
peak per JEDEC J-STD-20C
Rating
2
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
Revision Date: 09/23/05
Silicon Step Recovery Diodes
Absolute Maximum Ratings
(Glass Packaged)
Parameters
Reverse Voltage
Forward Current
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Soldering Temperature
Rated V
BR
100 mA
600
°C
/ W
-65
°C
to +200
°C
-65
°C
to +200
°C
+230
°C
for 10 seconds
Rating
Glass Packaged
V
BR
C
J
MAX
pF
0.65
0.40
6.0
4.0
2.0
1.6
0.60
C
T
TYP
pF
0.55
0.40
4.0
3.0
1.0
1.65
0.60
MIN
ns
TYP
ns
t
t
TYP
ps
t
t
MAX
ps
C
P
TYP
pF
0.1
5
0.1
5
0.1
5
0.1
5
0.1
5
0.1
5
0.1
5
L
P
TYP
nH
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Model
MMD01
51
MMD01
53
MMD0803
MMD081
5
MMD0825
MMD0833
MMD0840
MIN
V
1
5
25
70
50
45
25
1
5
Package
A1
5
A1
5
A1
5
A1
5
A1
5
A1
5
A1
5
10
10
200
100
30
10
10
1
5
1
5
250
1
35
50
1
5
20
100
95
275
180
1
30
90
75
---
---
400
320
160
---
---
Test Conditions
I
R
=
10 A
V
R
= 6 V
V
R
= 10 V
F = 1 MHz
I
F
= 10 mA
I
R
= 6 mA
Measured at
50% Recovery
I
F
= 10 mA
V
R
= 10 V
Chip data,
package limited
to 100 ps
F = 1 MHz
Outline Drawing
A15
16 [0.41]
14 [0.36]
Ca tho d e Ba nd
76 [1.93]
68 [1.73]
Dia .
1000 [25.4] Min.
2 Pls
170 [4.32]
150 [3.81]
4
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
Revision Date: 09/23/05
Silicon Step Recovery Diodes
Configuration Code
-0S
-1S
Absolute Maximum Ratings
(Plastic Packaged)
Parameters
Reverse Voltage
Forward Current
Power Dissipation
Operating Temperature
Storage Temperature
Soldering Temperature
Rated V
BR
100 mA
250 mW, Derate linearly to zero at T
A
= +1
°C
50
-65
°C
to +1
°C
50
-65
°C
to +1
°C
50
+260
°C
peak per JEDEC J-STD-20C
Rating
Plastic Packaged
V
BR
C
J
MIN
pF
C
J
MAX
pF
MIN
ns
TYP
ns
t
t
TYP
ps
t
t
MAX
ps
Model
SMMD805-SOT23
SMMD810-SOT23
SMMD820-SOT23
SMMD830-SOT23
SMMD832-SOT23
SMMD835-SOT23
SMMD837-SOT23
SMMD840-SOT23
SMMD805-SOD323
SMMD810-SOD323
SMMD820-SOD323
SMMD830-SOD323
SMMD832-SOD323
SMMD835-SOD323
SMMD837-SOD323
SMMD840-SOD323
Configuration
-0S, 1S
-0S, 1S
-0S, 1S
-0S, 1S
-0S, 1S
-0S, 1S
-0S, 1S
-0S, 1S
---
---
---
---
---
---
---
---
MIN
V
60
50
40
25
20
20
20
1
5
60
50
40
25
20
20
20
1
5
Package
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
SOD323
2.5
1.5
1.0
0.5
0.4
0.3
0.2
0.2
2.5
1.5
1.0
0.5
0.4
0.3
0.2
0.2
3.5
2.5
1.7
1.0
0.8
0.7
0.4
0.4
3.5
2.5
1.7
1.0
0.8
0.7
0.4
0.4
80
40
30
1
5
10
10
5
5
80
40
30
1
5
10
10
5
5
100
70
60
30
20
1
5
1
2
10
100
70
60
30
20
1
5
1
2
10
250
200
1
10
90
85
80
75
70
250
200
1
10
90
85
80
75
70
300
250
1
25
1
10
100
100
90
90
300
250
1
25
1
10
100
100
90
90
Test Conditions
I
R
= 10 A
V
R
= 6 V
F = 1 MHz
I
F
= 10 mA
I
R
= 6 mA
Measured at
50% Recovery
I
F
= 10 mA
V
R
= 10 V
Aeroflex / Metelics, Inc.
www.aeroflex-metelics.com
5
Revision Date: 09/23/05
Embedded System
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