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BYV32F50

Description
Rectifier Diode, 10A, 50V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size530KB,9 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BYV32F50 Overview

Rectifier Diode, 10A, 50V V(RRM),

BYV32F50 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-609 codee0
Maximum non-repetitive peak forward current160 A
Maximum operating temperature150 °C
Maximum output current10 A
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BYV32F50 Related Products

BYV32F50 BYV32F100 BYV32F200 BYV32F150
Description Rectifier Diode, 10A, 50V V(RRM), Rectifier Diode, 10A, 100V V(RRM), Rectifier Diode, 10A, 200V V(RRM), Rectifier Diode, 10A, 150V V(RRM),
Is it Rohs certified? incompatible incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V 1.1 V 1.1 V
JESD-609 code e0 e0 e0 e0
Maximum non-repetitive peak forward current 160 A 160 A 160 A 160 A
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Maximum output current 10 A 10 A 10 A 10 A
Maximum repetitive peak reverse voltage 50 V 100 V 200 V 150 V
Maximum reverse recovery time 0.025 µs 0.025 µs 0.025 µs 0.025 µs
surface mount NO NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
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