BYV36CGP datasheet, PDF - EEWORLD Datasheet

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BYV36CGP: DescriptionRectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2; CategoryDiscrete semiconductor diode; File Size226KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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BYV36CGP Overview

Rectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2

BYV36CGP Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	O-PALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.35 V
JEDEC-95 code	DO-15
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1.6 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.1 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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BYV36AGP THRU BYV36EGP

SINTERED GLASS JUNCTION

FAST SWITCHING PLASTIC RECTIFIER

VOLTAGE：200 - 1000V

：

CURRENT: 1.5A

FEATURE

High temperature metallurgic ally bonded construction

Sintered glass cavity free junction

Capability of meeting environmental standard of

MIL-S-19500

High temperature soldering guaranteed

350°C /10sec/0.375”lead length at 5 lbs tension

Operate at Ta

=35°C

with no thermal run away

Typical Ir<0.1µA

DO-15

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: color band denotes cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Reverse avalanche breakdown voltage

at IR = 0.1 mA

Maximum Average Forward Rectified

Ttp = 60



C; lead length = 10 mm;

Peak Forward Surge Currentt = 10 ms half sine

wave; Tj = Tj max

Maximum Forward Voltage at rated Forward

Current and 50°C

Non-repetitive peak reverse avalanche energy

(Note 1)

Maximum DC Reverse Current

Ta =25°C

at rated DC blocking voltage

Ta =150°C

Maximum Reverse Recovery Time (Note 2)

Typical Junction Capacitance

(Note 3)

Typical Thermal Resistance

(Note 4)

Storage and Operating Junction Temperature

Vrrm

Vrms

Vdc

BYV36A

GP

200

140

200

300

BYV36B

GP

400

280

400

500

1.6

BYV36C

GP

600

420

600

700

BYV36D

GP

800

560

800

900

1.5

BYV36E

GP

1000

700

1000

1100

units

V

A

V

(BR)R

(min)

If(av)

Ifsm

Vf

ERSM

Ir

Trr

Cj

Rθja

Tstg, Tj

30

1.35

10

5.0

150.0

100

45

55.0

-65 to +175

150

40

1.45

V

mJ

µA

nS

pF

°C

/W

°C

Note: 1.R=400mA; Tj=Tjmax prior to surge; inductive load switched off

2.Reverse Recovery Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

3.Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

4.Thermal Resistance from Junction to Ambient at 3/8”lead length, P.C. Board Mounted

Rev.A6

www.gulfsemi.com

BYV36CGP Related Products

	BYV36CGP	BYV36DGP	BYV36AGP	BYV36BGP
Description	Rectifier Diode, 1 Phase, 1 Element, 1.6A, 600V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 1.5A, 800V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 1.6A, 200V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2	Rectifier Diode, 1 Phase, 1 Element, 1.6A, 400V V(RRM), Silicon, DO-15, PLASTIC PACKAGE-2
Maker	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor	Gulf Semiconductor
package instruction	O-PALF-W2	PLASTIC PACKAGE-2	O-PALF-W2	O-PALF-W2
Reach Compliance Code	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
application	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY	FAST RECOVERY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.35 V	1.45 V	1.35 V	1.35 V
JEDEC-95 code	DO-15	DO-15	DO-15	DO-15
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	30 A	30 A	30 A	30 A
Number of components	1	1	1	1
Phase	1	1	1	1
Number of terminals	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	1.6 A	1.5 A	1.6 A	1.6 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	600 V	800 V	200 V	400 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.1 µs	0.15 µs	0.1 µs	0.1 µs
surface mount	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL
Base Number Matches	1	1	1	1

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