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FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
May 2008
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET
Half-Bridge Driver
Features
Two-phase, N-channel MOSFET driver in a Single
Compact Package for Multi-phase Buck Converter
Applications
Each Phase Drives the N-channel High-side and
Low-side MOSFETs in a Synchronous Buck
Configuration
Two-phase Driver Reduces Printed Circuit Board
Area
Variable High-side and Low-side Gate Drive Voltages
for Flexibility and Performance Optimization at
Higher Frequencies
Internal Adaptive “Shoot-through” Protection
Fast Rise and Fall Times
High Switching Frequency: up to 1 MHz
Common Enable (EN) Turns Off both Upper and
Lower Output FETs
TTL-compatible PWM and EN Inputs
Under-Voltage Lockout Protection Feature
Available in SOIC-16 and MLP-16 Packages
Description
FAN5110 contains two N-channel MOSFET drivers on a
single die in one package. It replaces two single-phase
drivers in a multiple-phase PWM design. Each phase is
specifically designed to drive both the upper and lower
N-channel power MOSFETs of a synchronous rectified
buck converter at high switching frequencies.
This two-phase driver, combined with a Fairchild multi-
phase PWM controller and power MOSFETs, forms a
complete V-core power supply solution for advanced
microprocessors.
The lower drivers are powered externally through the
PVCC pin. The PVCC pin is normally connected to V
CC
,
which drives the lower MOSFET’s gates at 12V
GS
.
Connecting the PVCC pin to a voltage lower than V
CC
lowers the V
GS
voltage, resulting in much less driver
power dissipation. This is especially valuable when
driving MOSFETs with high gate charge (Q
gtot
) and in
applications requiring high switching frequencies.
The driver’s adaptive shoot-through protection prevents
the upper and lower MOSFETs from conducting
simultaneously. The FAN5110 is rated for operation
from 0°C to +85°C and is available in a low-cost 16-pin
(Small Outline Integrated Circuit) SOIC package and a
higher power MLP-16 package.
Applications
Multi-Phase VRM/VRD Regulators for
Microprocessor Supplies
Two Separate, Single-phase Supply Designs
High-Current, High-Frequency DC/DC Converters
High-Power Modular Supplies
General-Purpose, TTL Input, 12V Driver for
Half-Bridge and Full-Bridge Applications
Related Resources
AN-6003 — “Shoot-through” in Synchronous
Buck Converters
Ordering Information
Part Number
FAN5110MX
FAN5110MPX
Operating
Temperature Range
0°C to 85°C
0°C to 85°C
Package
SOIC-16
MLP-16, 4x4mm
Eco Status
RoHS
RoHS
Packing
Method
Tape and Reel
Tape and Reel
Quantity
Per Reel
2500
2500
For Fairchild’s definition of “green” Eco Status, please visit:
http://www.fairchildsemi.com/company/green/rohs_green.html.
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Pin Configurations
Figure 1. Packages (Top View)
Pin Definitions
MLP
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SOIC
15
16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
NA
Name
SW2
HDRV2
BOOT2
EN
PWM2
VSS
PWM1
VCC
BOOT1
HDRV1
SW1
PGND1
LDRV1
PVCC
LDRV2
PGND2
Paddle
Description
Switch Node Input.
Connect as shown in Figure 1. SW provides return for the high-side
bootstrapped driver and acts as a sense point for the adaptive shoot-through protection.
High-Side Gate Drive Output.
Connect to the gate of the high-side power MOSFET(s).
Bootstrap Supply Input.
Provides voltage supply to the high-side MOSFET driver.
Connect to bootstrap capacitor and diode.
Enable.
When LOW, this pin disables FET switching (HDRV and LDRV are held LOW).
This pin is common for both drivers
(previously referred to as OD#).
PWM Signal Input.
Accepts a logic-level PWM signal from the controller.
Signal Ground.
Connect directly to the ground plane.
PWM Signal Input.
Accepts a logic-level PWM signal from the controller.
Power Input Voltage.
+12V power for the internal logic. Bypass with a minimum 1µF
X7R or 4.7µF X5R ceramic capacitor.
Bootstrap Supply Input.
Provides voltage supply to the high-side MOSFET driver.
Connect to bootstrap capacitor and diode.
High Gate Drive Output.
Connect to the gate of the high-side power MOSFET(s).
Switch Node Input.
Connect as shown in Figure 1. SW provides return for the high-side
bootstrapped driver and acts as a sense point for the adaptive shoot-through protection.
Power Ground.
Connect directly to the source of low-side MOSFET(s) and C
VCC
.
Low-Side Gate Drive Output.
Connect to the gate of the low-side power MOSFET(s).
Lower Gate Drive Voltage.
This is the input supply for the lower drivers. The V
GS
of the
lower MOSFETs matches this voltage. Connect to V
CC
or a lower voltage.
Lower Gate Drive Output.
Connect to the gate of the low-side power MOSFET(s).
Power Ground.
Connect directly to the source of low-side MOSFET(s) and C
VCC
.
MLP Package Only.
Connected to ground inside the chip. Connect to ground plane for
lowest thermal resistance.
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
2
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Application Diagram
Figure 2. Typical Two-Phase Application
Block Diagram
VCC
EN
VCC
Boot
PWM
HDRV
T
Fall
Delay
1.2V
T
Fall
Delay
VCC/3
SW
1.2V
VSS
PVCC
LDRV
GND
Figure 3. Functional Block Diagram, Each Side
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
www.fairchildsemi.com
3
FAN5110 — Two-Phase, Bootstrapped, 12V NMOSFET Half-Bridge Driver
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable
above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition,
extended exposure to stresses above the recommended operating conditions may affect device reliability. Absolute
maximum ratings are stress ratings only. Unless otherwise specified, voltages referenced to GND.
Parameter
VCC and PVCC to GND
PWM and EN Pins
SW to GND
BOOT to SW
BOOT to GND
HDRV
Conditions
Continuous
Transient (t < 4ns)
Continuous
Transient (t < 100ns)
Continuous
Transient (t < 20ns)
Continuous
Transient (t < 100ns)
Continuous
(1)
(1)
(1)
Min.
-0.3
-0.3
-0.3
-1
-5
-0.3
-2
-0.3
V
SW
-1.0
-0.5
(1)
Max.
15.0
19.0
5.5
15
25
15.0
17
30.0
38
V
BOOT
+0.3
V
CC
V
CC
+0.3
V
CC
+2.0
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V
LDRV
Transient (t < 200ns)
Transient (t < 20ns)
-2.0
-2.0
Note:
1. For transient derating beyond the levels indicated, refer to Figure 17 and Figure 18.
Thermal Information
Symbol
T
J
T
STG
T
L
T
VP
T
LI
P
D
θ
JC
θ
JA
θ
JC
θ
JA
Junction Temperature
Storage Temperature
Lead Soldering Temperature, 10 Seconds
Vapor Phase, 60 Seconds
Infrared, 15 Seconds
Power Dissipation, T
A
= 25°C, T
JMAX
= 125°C
Thermal Resistance, SO-16, Junction-to-Board
Thermal Resistance, SO-16, Junction-to-Ambient
Thermal Resistance, MLP16, Junction-to-Case
Thermal Resistance, MLP16, Junction-to-Ambient
40
117
5
37
Parameter
Min.
0
-65
Typ.
Max.
+150
+150
+300
+215
+220
850
Unit
°C
°C
°C
°C
°C
mW
°C/W
°C/W
°C/W
°C/W
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
V
CC
PV
CC
V
IO
T
A
T
J
Parameter
Supply Voltage
PVCC Input Voltage
Boot Diode Anode Voltage
Ambient Temperature
Junction Temperature
Conditions
V
CC
to Ground
PV
CC
to Ground
Anode to Ground
Min.
10.0
8.0
8.0
0
0
Typ.
12.0
12.0
12.0
Max.
13.5
13.5
13.5
+85
+125
Unit
V
V
V
°C
°C
www.fairchildsemi.com
© 2006 Fairchild Semiconductor Corporation
FAN5110 • Rev. 1.1.0
4
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