SBG870 - SBG8100
8.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER
RECTIFIER
Features
·
·
·
·
·
·
·
Schottky Barrier Chip
Guard Ring for Transient Protection
Low Power Loss, High Efficiency
High Current Capability, Low V
F
High Surge Capability
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
Plastic Material: UL Flammability
Classification Rating 94V-0
NEW PRODUCT
E
A
4
D
2
PAK
G
H
B
Dim
A
B
C
D
E
G
Min
9.65
14.60
0.51
2.29
4.37
1.14
1.14
8.25
0.30
2.03
2.29
Max
10.69
15.88
1.14
2.79
4.83
1.40
1.40
9.25
0.64
2.92
2.79
J
1
2
3
Mechanical Data
·
·
·
·
·
Case: D
2
PAK, Molded Plastic
Terminals: Plated Leads, Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 1.7 grams (approx.)
Marking: Type Number
D
C
PIN 1
PIN 3
M
K
L
PIN 2 & 4
H
J
K
L
M
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
C
= 110°C
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage (Note 2)
Peak Reverse Current
at Rated DC Blocking Voltage
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance Junction to Case
Voltage Rate of Change
Operating and Storage Temperature Range
@ I
F
= 8.0A, T
C
= 25°C
@T
C
= 25°C
@ T
C
= 125°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
C
j
R
qJL
dV/dt
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
SBG
870
70
49
SBG
880
80
56
8.0
175
0.85
0.1
100
200
3.0
10000
SBG
890
90
63
SBG
8100
100
70
Unit
V
V
A
A
V
mA
pF
K/W
V/ms
°C
-65 to +150
Notes:
1. Thermal resistance junction to case mounted on heatsink.
2. 300ms pulse width, 2% duty cycle.
3. Measured at V
R
= 4.0V and f = 1.0MHz
DS30131 Rev. 1P-1
1 of 2
SBG870-SBG8100
8
I
F
, INSTANTANEOUS FORWARD CURRENT (A)
10
100
NEW PRODUCT
I
(AV)
, AVERAGE FORWARD CURRENT (A)
10
T
j
= 125
°
C
6
4
1.0
T
j
= 25
°
C
2
0
0
50
100
150
T
C
, CASE TEMPERATURE (
°
C)
Fig. 1 Forward Current Derating Curve
0.1
0
0.4
0.8
Pulse Width = 300
µ
s
2% Duty Cycle
1.2
1.6
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
4000
I
FSM
, PEAK FORWARD SURGE CURRENT (A)
300
250
200
150
8.3ms single half-sine-wave
JEDEC method
T
j
= 25
°
C
C
j
, CAPACITANCE (pF)
1000
100
50
0
100
1
10
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Surge Current
100
0.1
1.0
10
100
V
R
, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
DS30131 Rev. 1P-1
2 of 2
SBG870-SBG8100
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