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DB37315E

Description
Mixer Diode,
CategoryDiscrete semiconductor    diode   
File Size383KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
Download Datasheet Parametric View All

DB37315E Overview

Mixer Diode,

DB37315E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
Reach Compliance Codeunknown
ECCN codeEAR99
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.4 V
Maximum non-repetitive peak forward current0.15 A
Maximum operating temperature125 °C
Maximum output current0.03 A
Maximum repetitive peak reverse voltage30 V
surface mountYES
technologySCHOTTKY
This product complies with the RoHS Directive (EU 2002/95/EC).
DB37315E
Silicon epitaxial planar type
For high speed switching circuits
DB3S315E in SSSMini3 type package
Features
Short reverse recovery time t
rr
Small reverse current I
R
Contributes to miniaturization of sets, reduction of component count.
Eco-friendly Halogen-free package
Package
Code
SSSMini3-F2-B
Name
Pin
1: Anode-1
2: Anode-2
Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
3: Cathode-1
Cathode-2
Marking Symbol: 5D
Internal Connection
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Maximum peak reverse voltage
Forward current
Peak forward current
Junction temperature
Storage temperature
Note) *: Value of each diode in double diodes used.
Symbol
V
R
V
RM
Single
Double
*
Single
Double
*
I
F
I
FM
T
j
T
stg
Rating
30
30
30
20
150
110
125
–55 to +125
Unit
V
V
mA
mA
°C
°C
1
3
2
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*
Symbol
V
F1
V
F2
I
R
C
t
t
rr
I
F
= 1 mA
I
F
= 30 mA
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
=10 mA, I
rr
= 1 mA 
1.4
1.0
Conditions
Min
Typ
Max
0.4
1.0
300
Unit
V
nA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 2 GHz
*: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
Output Pulse
t
rr
t
I
rr
= 1 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
Ver. AED
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 10 mA
I
R
= 10 mA
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: November 2011
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