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BLW98

Description
RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,
CategoryDiscrete semiconductor    The transistor   
File Size11KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
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BLW98 Overview

RF Power Bipolar Transistor, Ultra High Frequency Band, Silicon, NPN,

BLW98 Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionPOST/STUD MOUNT, O-CRPM-F4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-based maximum capacity30 pF
Collector-emitter maximum voltage25 V
ConfigurationSingle
Minimum DC current gain (hFE)15
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeO-CRPM-F4
Number of terminals4
Maximum operating temperature200 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formPOST/STUD MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)21.5 W
Certification statusNot Qualified
surface mountNO
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
BLW98
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .280 4L STUD
DESCRIPTION:
The
ASI BLW98
is Designed for
use in UHF amplifier applications
up to 860 MHz.
FEATURES:
P
G
= 16.5 dB Typical at 860 MHz
Common Emitter
Omnigold™
Metallization System
MAXIMUM RATINGS
I
C
V
CB
P
DISS
T
J
T
STG
θ
JC
2.0 A
50 V
21.5 W @ T
C
= 70
O
C
-65 C to +200 C
-65 C to +150 C
6.0
O
C/W
O
O
O
O
D IM
A
B
C
D
E
F
G
H
I
J
K
.1 7 5 / 4 .4 5
.2 7 5 / 6 .9 9
.2 4 5 / 6 .2 2
.6 4 0 / 1 6 . 2 6
.2 1 7 / 5 .5 1
.2 8 5 / 7 .2 4
E
F
G
H
K
M I N IM U M
in c h e s / m m
A
45°
C
B
E
B
D
C
E
J
I
# 8 -3 2 U N C
M A X IM U M
in c h e s / m m
1 . 0 1 0 / 2 5 .6 5
.2 2 0 / 5 .5 9
.2 7 0 / 6 .8 6
.0 0 3 / 0 .0 8
.1 1 7 / 2 .9 7
.5 7 2 / 1 4 . 5 3
.1 3 0 / 3 .3 0
1 . 0 5 5 / 2 6 .8 0
.2 3 0 / 5 .8 4
.2 8 5 / 7 .2 4
.0 0 7 / 0 .1 8
.1 3 7 / 3 .4 8
.2 5 5 / 6 .4 8
ORDER CODE: ASI10762
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
h
FE
C
C
T
C
= 25 C
O
TEST CONDITIONS
I
C
= 27 mA
I
C
= 10 mA
I
E
= 5.0 mA
V
CE
= 25 V
V
CB
= 25 V
V
CE
= 25 V
P
OUT
= 3.5 W
I
C
= 850 mA
I
C
= 850 mA
f = 1.0 MHz
f = 860 MHz
MINIMUM TYPICAL MAXIMUM
25
50
3.5
15
24
6.5
-60
30
UNITS
V
V
V
---
pF
dB
dBc
P
G
IMD
1
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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