TPCA8081
MOSFETs
Silicon N-Channel MOS (U-MOS)
TPCA8081
1. Applications
•
•
Notebook PCs
Mobile Handsets
2. Features
(1)
(2)
(3)
(4)
Small footprint due to a small and thin package
Low drain-source on-resistance: R
DS(ON)
= 2.3 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 30 V)
Enhancement mode: V
th
= 1.3 to 2.3 V (V
DS
= 10 V, I
D
= 0.5 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
25
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(T
c
= 25)
(t = 10 s)
(t = 10 s)
(Note 2)
(Note 3)
(Note 4)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AR
T
ch
T
stg
Rating
30
±20
38
114
52
2.8
1.6
187
38
150
-55 to 150
W
W
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-06-25
Rev.1.0
TPCA8081
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
Channel-to-ambient thermal resistance
(T
c
= 25)
(t = 10 s)
(t = 10 s)
(Note 2)
(Note 3)
Symbol
R
th(ch-c)
R
th(ch-a)
R
th(ch-a)
Max
2.4
44.6
78.1
/W
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: V
DD
= 24 V, T
ch
= 25 (initial), L = 0.1 mH, R
G
= 1
Ω,
I
AR
= 38 A
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2010-06-25
Rev.1.0
TPCA8081
6. Electrical Characteristics (T
a
= 25
unless otherwise specified)
25
6.1. Static Characteristics
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
Gate threshold voltage
Drain-source on-resistance
V
th
R
DS(ON)
Test Condition
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 0.5 mA
V
GS
= 4.5 V, I
D
= 19 A
V
GS
= 10 V, I
D
= 19 A
Min
30
15
1.3
Typ.
3.0
2.3
Max
±0.1
10
2.3
3.8
3.0
mΩ
V
Unit
µA
6.2. Dynamic Characteristics
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
See Figure 6.2.1.
Test Condition
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
Min
Typ.
3600
200
680
4.3
13
6.9
48
Max
ns
Unit
pF
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics
Characteristics
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain charge
Symbol
Q
g
Q
gs1
Q
gd
Test Condition
V
DD
≈
24 V, V
GS
= 10 V, I
D
= 38 A
Min
Typ.
51
11
6.4
Max
Unit
nC
6.4. Source-Drain Characteristics
Characteristics
Pulsed reverse drain current
Diode forward voltage
(Note 5)
Symbol
I
DRP
V
DSF
I
DR
= 38 A, V
GS
= 0 V
Test Condition
Min
Typ.
Max
114
-1.2
Unit
A
V
Note 5: Ensure that the channel temperature does not exceed 150.
3
2010-06-25
Rev.1.0
TPCA8081
7. Marking
Fig. 7.1 Marking
4
2010-06-25
Rev.1.0
TPCA8081
8. Characteristics Curves (Note)
Fig. 8.1 I
D
- V
DS
Fig. 8.2 I
D
- V
DS
Fig. 8.3 I
D
- V
GS
Fig. 8.4 V
DS
- V
GS
Fig. 8.5 R
DS(ON)
- I
D
Fig. 8.6 R
DS(ON)
- T
a
5
2010-06-25
Rev.1.0
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