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TPCA8081(TE12L)

Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,38A I(D),SO
CategoryDiscrete semiconductor    The transistor   
File Size233KB,9 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

TPCA8081(TE12L) Overview

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,38A I(D),SO

TPCA8081(TE12L) Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)38 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)52 W
surface mountYES
Base Number Matches1
TPCA8081
MOSFETs
Silicon N-Channel MOS (U-MOS)
TPCA8081
1. Applications
Notebook PCs
Mobile Handsets
2. Features
(1)
(2)
(3)
(4)
Small footprint due to a small and thin package
Low drain-source on-resistance: R
DS(ON)
= 2.3 mΩ (typ.) (V
GS
= 10 V)
Low leakage current: I
DSS
= 10
µA
(max) (V
DS
= 30 V)
Enhancement mode: V
th
= 1.3 to 2.3 V (V
DS
= 10 V, I
D
= 0.5 mA)
3. Packaging and Internal Circuit
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
SOP Advance
25
4. Absolute Maximum Ratings (Note) (T
a
= 25
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation
Power dissipation
Power dissipation
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(T
c
= 25)
(t = 10 s)
(t = 10 s)
(Note 2)
(Note 3)
(Note 4)
(Note 1)
(Note 1)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D
P
D
P
D
E
AS
I
AR
T
ch
T
stg
Rating
30
±20
38
114
52
2.8
1.6
187
38
150
-55 to 150
W
W
W
mJ
A
A
Unit
V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-06-25
Rev.1.0

TPCA8081(TE12L) Related Products

TPCA8081(TE12L) TPCA8081(TE12L,Q)
Description TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,38A I(D),SO TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,38A I(D),SO
Is it Rohs certified? incompatible conform to
Maker Toshiba Semiconductor Toshiba Semiconductor
Reach Compliance Code unknown unknown
Configuration Single Single
Maximum drain current (Abs) (ID) 38 A 38 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 52 W 52 W
surface mount YES YES
Base Number Matches 1 1
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