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IR25XB06

Description
DIODE 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size78KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

IR25XB06 Overview

DIODE 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode

IR25XB06 Parametric

Parameter NameAttribute value
MakerVishay
package instructionR-PSFM-T4
Reach Compliance Codeunknown
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.05 V
JESD-30 codeR-PSFM-T4
Maximum non-repetitive peak forward current365 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current25 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
Target Data rev. A 01/02
IR25XB..
25.0 Amps Single Phase Full Wave
Features
Diode chips are glass passivated
Suitable for Universal hole mounting
Easy to assemble & install on P.C.B.
High Surge Current Capability
High Isolation between terminals and molded case (2500 V
RMS
)
High Thermal Conductivity
Lead free terminals solderable as per MIL-STD-750, Method 2026
High Temperature soldering guaranteed at 260°C/ 8-10secs
UL approval in Progress E215862
Bridge Rectifier
I
O(AV)
= 25A
V
RRM
= 200/ 800V
Description
These IRXB Series of Single Phase Bridges consist
of four glass passivated silicon junction connected
as a Full Wave Bridge. These four junctions are
encapsulated by plastic molding technique. These
Bridges are mainly used in Switch Mode power
supply, Induction cooker, Airconditioner, Washing
Machine and Microwave oven.
Major Ratings and Characteristics
Parameters
I
O
@ T
C
I
FSM
@ 50Hz
@ 60Hz
I
2
t
@ 50Hz
@ 60Hz
V
RRM
T
J
range
IR25XB..
25
98
350
365
610
550
200 to 800
- 55 to 150
Units
A
°
C
A
A
A
2
s
A
2
s
V
o
IR25XB..
C
1

IR25XB06 Related Products

IR25XB06 IR25XB02 IR25XB04 IR25XB08
Description DIODE 25 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode DIODE 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE, Bridge Rectifier Diode
package instruction R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Reach Compliance Code unknown unknown unknow unknown
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.05 V 1.05 V 1.05 V 1.05 V
JESD-30 code R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Maximum non-repetitive peak forward current 365 A 365 A 365 A 365 A
Number of components 4 4 4 4
Phase 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C
Maximum output current 25 A 25 A 25 A 25 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 600 V 200 V 400 V 800 V
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maker Vishay Vishay Vishay -
ECCN code - EAR99 EAR99 EAR99
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