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DF5A3.3F(TE85LF)

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size191KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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DF5A3.3F(TE85LF) Overview

Zener Diode

DF5A3.3F(TE85LF) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Diode typeZENER DIODE
Base Number Matches1
DF5A3.3F
TOSHIBA Diodes for Protecting against ESD
DF5A3.3F
Diodes for Protecting against ESD
*
This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
200
125
−55
to 125
Unit
mW
°C
°C
0.16
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
JEDEC
JEITA
TOSHIBA
1-3H1A
Weight: 0.014g (typ.)
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 1 V
V
R
=
0 V, f
=
1 MHz
Test Condition
Min
3.1
Typ.
3.3
115
Max
3.5
130
20
Unit
V
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
30 kV
Criterion: No damage to device elements
Start of commercial production
2002-10
1
2014-03-01

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Maker Toshiba Semiconductor Toshiba Semiconductor
Reach Compliance Code unknown unknown
Diode type ZENER DIODE ZENER DIODE
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