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DF5A5.6LFU(TE85LF

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size149KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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DF5A5.6LFU(TE85LF Overview

Zener Diode

DF5A5.6LFU(TE85LF Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
Reach Compliance Codeunknown
Factory Lead Time12 weeks
Diode typeZENER DIODE
Base Number Matches1
DF5A5.6LFU
TOSHIBA Diodes for Protecting against ESD
DF5A5.6LFU
Product for Use Only as Protection against Electrostatic
Discharge (ESD)
*
This product is for protection against electrostatic discharge (ESD)
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
The mounting of four devices on an ultra-compact package allows the
number of parts and the mounting cost to be reduced.
Low terminal capacitance: C
T
= 8.0 pF (typ.)
Unit: mm
Absolute Maximum Ratings
(Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
T
j
T
stg
Rating
200
125
−55
to 125
Unit
mW
°C
°C
1.CATHODE 1
2. ANODE
3.CATHODE2
4.CATHODE3
5.CATHODE4
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-2V1B
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 0.0062 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristic
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Symbol
V
Z
Z
Z
I
R
C
T
I
Z
= 5 mA
I
Z
= 5 mA
V
R
= 3.5 V
V
R
= 0V, f = 1 MHz
Test Condition
Min
5.3
Typ.
5.6
8
Max
6.0
50
1.0
Unit
V
μA
pF
Guaranteed Level of ESD Immunity
Test Condition
IEC61000-4-2
(Contact discharge)
ESD Immunity Level
±
8 kV
Criterion: No damage to device elements
Start of commercial production
2003-02
1
2014-03-01

DF5A5.6LFU(TE85LF Related Products

DF5A5.6LFU(TE85LF DF5A5.6LFU(TE85L,F DF5A5.6LFU(5LMAA,F
Description Zener Diode TVS DIODE 3.5V USV Zener Diode, 5.6V V(Z), 6.19%, 0.2W, Silicon, Unidirectional
Maker Toshiba Semiconductor - Toshiba Semiconductor
Reach Compliance Code unknown - unknown
Diode type ZENER DIODE - ZENER DIODE
Base Number Matches 1 - 1

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