V
CE
I
C
=
=
1200 V
150 A
IGBT Module LoPak4 SPT
5SNS 0150V121100
MARKETING INFORMATION
Doc. No. 5SYA1525-00 Aug. 00
Low-loss, rugged IGBT SPT
chip-set
EMC friendly diode with positive
temp. coefficient of on-state
Low profile compact package
Drop-on bus bars and snap-on
PCB assembly
Integrated NTC case
temperature sensor
•
• •
•
•
Maximum Rated Values
Parameter
Collector-Emitter Voltage
DC Collector Current
Peak Collector Current
Gate Emitter Voltage
Total Power Dissipation
IGBT Switching SOA
IGBT Short Circuit SOA
DC Forward Current
Peak Forward Current
Symbol
V
CES
I
C
I
CM
V
GES
Ptot
SwSOA
SCSOA
I
F
I
FM
(T
vj
= 25°C, unless specified otherwise)
Conditions
V
GE
shorted
T
hs
= 75°C
Pulse: tp=1ms, T
hs
= 75°C
T
hs
= 25°C per switch
I
C
= 300 A, V
CEM
= 1200 V, V
CC
≤
1000 V,
V
GE
=
±15
V, T
vj
=125°C
voltages measured on auxiliary terminals
V
CC
= 900 V, V
CEM
= 1200 V, t
p
= 10 µs,
V
GE
=
±15
V, Tvj =125 °C
150
Pulse: tp = 1ms, T
hs
= 75°C
300
A
A
Values
1200
150
300
±20
465
Unit
V
A
A
V
W
ABB Semiconductors AG reserves the right to change specifications without notice.
5SNS 0150V121100
Maximum Rated Values
(cont.)
Parameter
Junction Temperature
Storage Temperature
Isolation Voltage
Symbol
T
vj
T
tstg
/T
cop
V
iso
(T
vj
= 25°C, unless specified otherwise)
Conditions
Values
- 40 ~ 150
- 40 ~ 125
Unit
°C
°C
V
Nm
Nm
1 min, f = 50Hz
(M6) Hole 6.5mm diameter
M6 bolts
Self tapping screw, Hole
2.5mm diameter, 6.0mm deep
Spring pins, pitch of pins =
2mm, pcb thickness = 1.6mm
2500
2~4
2.5 ~ 4
Base to Heatsink
Main Terminals
Mounting
PCB mounting
Gate, Emitter Aux.
IGBT Characteristic Values
Parameter
Collector-Emitter
Saturation Voltage
Collector Cut-off Current
Gate-Emitter leakage
Current
Gate-Emitter Threshold
Voltage
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Module stray Inductance
Plus to Minus
Symbol
(T
vj
= 25°C, unless specified otherwise)
Conditions
T
vj
= 25 °C
T
vj
= 125 °C
min. typ.
1.90
2.10
12
±500
4.5
2300
11
6.5
max. Unit
2.30
V
V
mA
nA
V
µC
nF
nF
nF
µs
µs
µs
µs
mJ
mJ
20
1.2
nH
mΩ
V
CE(sat)
* I
C
= 150 A, V
GE
= 15 V
I
CES
I
GES
V
CE
= 1200 V, V
GE
= 0 V, T
vj
= 125 °C
V
CE
= 0 V, V
GE
=
±20
V, T
vj
= 125 °C
V
GE(TO)
I
C
= 6 mA, V
CE
= V
GE
Q
ge
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
L
s DC
I
C
= 150 A, V
CC
= 600 V, R
gon
= 6.8
Ω,
T
vj
= 125 °C, V
GE
=
±15
V
I
C
= 150 A, V
CC
= 600 V, R
goff
= 6.8
Ω,
T
vj
= 125 °C,V
GE
=
±15
V
R
gon
= 6.8
Ω
I
C
= 150 A, T
vj
= 125 °C,
V
CC
= 600 V, V
GE
=
±15
V,
inductive load, integrated up
R
goff
= 6.8
Ω
to: 3% V
CE
(E
on
), 1% I
C
(E
off
)
V
CE
= 25 V, V
GE
= 0 V, f = 1MHz
I
C
= 150 A, V
CE
= 600 V, V
GE
= -15 to 15 V
1.0
0.7
0.15
0.08
0.70
0.06
16.5
15.0
Resistance terminal-chip
R
CC’+EE’
Ths = 25°C
* Note 1: Collector emitter saturation voltage is given at die level.
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1525-00 Aug. 00
2 of 4
5SNS 0150V121100
Diode Characteristic Values
Parameter
Forward Voltage
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
Symbol
V
F
*
I
rrm
Q
rr
t
rr
(T
vj
= 25°C, unless specified otherwise)
Conditions
I
F
= 150 A
T
vj
= 25 °C
T
vj
= 125 °C
min.
typ.
2.00
2.00
160
23
0.15
11.5
1.2
max.
2.40
Unit
V
A
µC
µs
mJ
mΩ
I
F
= 150 A, R
gon
= 6.8
Ω,
V
CC
= 600 V,
V
GE
=
±15
V, T
vj
= 125 °C
I
F
= 150 A, T
vj
= 125 °C, V
CC
= 600V,
Reverse Recovery Energy
E
rec
R
gon
= 6.8
Ω,
V
GE
=
±15
V,
inductive load, fully integrated
Resistance terminal-chip
R
CC’+EE’
Ths = 25°C
* Note 2: Forward voltage is given at die level
Thermal Characteristics
Parameter
IGBT Thermal Resistance
Junction to Case
Diode Thermal Resistance
Junction to Case
Equivalent IGBT Thermal
Resistance Junct. to Heat
Equivalent Diode Thermal
Resistance Junct. to Heat
Temperature sensor
Symbol
R
th
j-c
Igbt
R
th
j-c
Diode
R
th
j-h
Igbt
R
th
j-h
Diode
NTC
(T
j
= 25°C, unless specified otherwise)
Conditions
Heatsink:
flatness < +/- 100 µm,
roughness < 6 µm
Thermal grease:
thickness < 100 µm
min.
typ.
max.
Unit
0.120 °C/W
0.240 °C/W
0.270 °C/W
0.380 °C/W
Thermistor : R=5kΩ ±3%@25°C, B-value (25°C/85°C): 3420K ±2%
Mechanical Properties
Parameter
Dimensions
Clearance Distance
Surface Creepage
Distance
Weight
Symbol
Conditions
acc. IEC 664-1 and Term. to base:
prEN50124-1:1995 Term. to term:
acc. IEC 664-1 and Term. to base:
prEN50124-1:1995 Term. to term:
min.
8
8
10
10
650
typ.
max.
Unit
mm
mm
mm
mm
mm
gr
L* W* H Typical , see outline drawing
D
C
D
SC
123 * 106.5 * 34.5
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1525-00 Aug. 00
3 of 4
5SNS 0150V121100
Electrical configuration
Outline drawing
ABB Semiconductors reserves the right to change specifications without notice.
ABB Semiconductors AG
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax
+41 (0)62 888 6306
Email
Info@ch.abb.com
Internet
www.abbsem.com
Doc. No. 5SYA1525-00 Aug. 00
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