The UT28F64LV amorphous silicon anti-fuse PROM is a high
performance, asynchronous, radiation-hardened,
8K x 8 programmable memory device. The UT28F64LV PROM
features fully asychronous operation requiring no external clocks
or timing strobes. An advanced radiation-hardened twin-well
CMOS process technology is used to implement the
UT28F64LV. The combination of radiation- hardness, fast
access time, and low power consumption make the UT28F64LV
ideal for high speed systems designed for operation in radiation
environments.
A(12:0)
DECODER
MEMORY
ARRAY
SENSE AMPLIFIER
CE
PE
OE
PROGRAMMING
CONTROL
LOGIC
DQ(7:0)
Figure 1. PROM Block Diagram
1
DEVICE OPERATION
The UT28F64LV has three control inputs: Chip Enable (CE),
Program Enable (PE), and Output Enable (OE); thirteen address
inputs, A(12:0); and eight bidirectional data lines, DQ(7:0). CE
is the device enable input that controls chip selection, active, and
standby modes. AssertingCE causes I
DD
to rise to its active value
and decodes the thirteen address inputs to select one of 8,192
words in the memory. PE controls program and read operations.
During a read cycle, OE must be asserted to enable the outputs.
PIN CONFIGURATION
PIN NAMES
A(12:0)
CE
OE
PE
DQ(7:0)
Address
Chip Enable
Output Enable
Program Enable
Data Input/Data Output
Table 1. Device Operation Truth Table
1
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
V
DD
PE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
Notes:
1. “X” is defined as a “don’t care” condition.
2. Device active; outputs disabled.
OE
X
0
1
1
PE
1
1
0
1
CE
1
0
0
0
I/O MODE
Three-state
Data Out
Data In
Three-state
MODE
Standby
Read
Program
Read
2
ABSOLUTE MAXIMUM RATINGS
1
(Referenced to V
SS
)
SYMBOL
V
DD
V
I/O
T
STG
P
D
T
J
Θ
JC
I
I
PARAMETER
DC supply voltage
Voltage on any pin
Storage temperature
Maximum power dissipation
Maximum junction temperature
Thermal resistance, junction-to-case
2
DC input current
LIMITS
-0.3 to 7.0
-0.5 to (V
DD
+ 0.5)
-65 to +150
1.5
+175
3.3
UNITS
V
V
°C
W
°C
°C/W
mA
±
10
Notes:
1 . Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the
device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
2 . Test per MIL-STD-883, Method 1012, infinite heat sink.
2
RECOMMENDED OPERATING CONDITIONS
SYMBOL
V
DD
T
C
V
IN
PARAMETER
Positive supply voltage
Case temperature range
DC input voltage
LIMITS
3.0 to 3.6
-55 to +125
0 to V
DD
UNITS
V
°C
V
DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
(V
DD
= 3.0V to 3.6V; -55°C < T
C
< +125°C)
SYMBOL
V
IH
V
IL
V
OL1
V
OL2
V
OH1
V
OH2
C
IN 1
C
IO 1, 4
I
IN
I
OZ
PARAMETER
High-level input voltage
Low-level input voltage
Low-level output voltage
Low-level output voltage
High-level output voltage
High-level output voltage
Input capacitance
Bidirectional I/O capacitance
I
OL
= 100µA, V
DD
= 3.0V
I
OL
= 1.0mA, V
DD
= 3.0V
I
OH
= -100µA, V
DD
= 3.0V
I
OH
= -1.0mA V
DD
= 3.0V
ƒ
= 1MHz, V
DD
= 3.3V
ƒ
= 1MHz, V
DD
= 3.3V
V
OUT
= 0V
Input leakage current
Three-state output leakage
current
V
IN
= 0V to V
DD
V
O
= 0V to V
DD
V
DD
= 3.6V
OE = 3.6V
V
DD
= 3.6V, V
O
= V
DD
V
DD
= 3.6V, V
O
= 0V
CMOS input levels (I
OUT
= 0),
V
IL
= 0.2V, V
IH
= 3.0V
V
DD
, PE = 3.6V
CMOS input levels,
V
IL
= V
SS
+0.25V
CE = V
DD
-025, V
IH
= V
DD
-0.25V
50
mA
-3
-8
3
8
µA
µA
V
DD
- 0.15
V
DD
- 0.3
15
15
CONDITION
MINIMUM
.7V
DD
.25V
DD
V
SS
+ 0.05
V
SS
+ 0.1
MAXIMUM
UNIT
V
V
V
V
V
V
pF
pF
I
OS 2,3
I
DD
(OP)
5
Short-circuit output current
90
-90
mA
mA
Supply current operating
@18.2MHz (55ns product)
I
DD
(SB)
post-rad
Supply current standby
500
µA
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si).
1. Measured only for initial qualification, and after process or design changes that could affect input/output capacitance.
2. Supplied as a design limit but not guaranteed or tested.
3. Not more than one output may be shorted at a time for maximum duration of one second.
4. Functional test.
5. Derates at 1.5mA/MHz.
3
READ CYCLE
A combination of PE greater than V
IH
(min), and CE less than
V
IL
(max) defines a read cycle. Read access time is measured
from the latter of device enable, output enable, or valid address
to valid data output.
An address access read is initiated by a change in address inputs
while the chip is enabled with OE asserted and PE deasserted.
Valid data appears on data output, DQ(7:0), after the specified
t
AVQV
is satisfied. Outputs remain active throughout the entire
cycle. As long as device enable and output enable are active, the
address inputs may change at a rate equal to the minimum read
cycle time.
AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(V
DD
= 3.0V to 3.6V; -55°C < T
C
< +125°C)
SYMBOL
t
AVAV 1
t
AVQV
t
AXQX 2
t
GLQX2
t
GLQV
t
GHQZ
t
ELQX 2
t
ELQV
t
EHQZ
PARAMETER
Read cycle time
Read access time
Output hold time
OE-controlled output enable time
OE-controlled access time
OE-controlled output three-state time
CE-controlled output enable time
CE-controlled access time
CE-controlled output three-state time
The chip enable-controlled access is initiated by CE going active
while OE remains asserted, PE remains deasserted, and the
addresses remain stable for the entire cycle. After the specified
t
ELQV
is satisfied, the eight-bit word addressed by A(12:0)
appears at the data outputs DQ(7:0).
Output enable-controlled access is initiated by OE going active
while CE is asserted, PE is deasserted, and the addresses are
stable. Read access time is t
GLQV
unless t
AVQV
or t
ELQV
have
not been satisfied.
28F64-55
MIN
MAX
55
55
0
0
25
25
0
55
25
UNIT
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
* Post-radiation performance guaranteed at 25
°C
per MIL-STD-883 Method 1019 at 1.0E6 rads(Si).
1. Functional test.
2. Three-state is defined as a 400mV change from steady-state output voltage.
4
t
AVAV
A(12:0)
CE
t
ELQX
t
ELQV
OE
t
GLQV
DQ(7:0)
t
GLQX
t
AVQV
t
AXQX
t
GHQZ
t
AVQV
t
EHQZ
Figure 2. PROM Read Cycle
RADIATION HARDNESS
The UT28F64LV PROM incorporates special design and layout
features which allow operation in high-level radiation
environments. UTMC has developed special low-temperature
processing techniques designed to enhance the total-dose
radiation hardness of both the gate oxide and the field oxide while
Dear experts, there are 3 serial ports on my development board. Serial port 1 is used for debugging, serial port 2 is useless, and serial port 3 is connected to infrared. Since I want to connect GPS a...
[b][size=4]The code of Dr. Dot's micro quadcopter will be open source soon. Download the source code of the program to light up the LCD screen of STM32F103. Download the source code of the test progra...
As the title says, it seems that CE does not support GetProcessMemoryInfo() API. Is there any other way? I want to display the memory occupied by the current application in real time on the interface...
STC microcontroller realizes the function of setting and displaying the threshold, but I don't know how to do it. Please give me a method! Description: There are two buttons, which set the + and - of ...
[font=微软雅黑]PCB is an indispensable part of modern electronics and a carrier for electrical connection of electronic components. With the continuous development of electronic technology, the density of...
The TIA Portal software's shift instructions shift the contents of an accumulator bit by bit to the left or right. The number of bits shifted is determined by N. A left shift of N bits multiplies t...[Details]
From being a global leader to losing the market, Korean battery manufacturers have always wanted to regain the lost market and dignity, but facing Chinese battery manufacturers represented by CAT...[Details]
PV DC fuses are safety devices used to protect PV panels, inverters, and DC loads. To ensure their safety and reliability, they must be UL248 certified.
Before applying for UL248 certifi...[Details]
On August 24th, Jin Yuzhi, CEO of Huawei's Intelligent Automotive Solutions BU, announced the first automotive application of Huawei Qiankun's unique Limera technology. This technology eliminates t...[Details]
1. Equipment Overview
Shell-and-tube heat exchangers are a common heat exchange device used in chemical evaporation and heating equipment. Currently, the tubesheets of shell-and-tube heat exch...[Details]
Electric vehicles are currently gaining momentum, but this is just a facade. Fuel-powered vehicles remain unchallenged. While electric vehicles boast unique advantages in environmental emissions an...[Details]
On August 25th, Apple's expansion in India encountered new troubles. According to Bloomberg, Foxconn Technology Group has recalled approximately 300 Chinese engineers from India, further hindering ...[Details]
With the rapid advancement of automation technology, collaboration between robots is no longer just science fiction. Imagine dozens of machines moving goods in a warehouse without interfering with ...[Details]
Common Mode Semiconductor has officially released its latest generation of power management ICs—the GM6506 series. This fully integrated high-frequency synchronous rectification step-down p...[Details]
When discussing autonomous driving technology, there are often two extremes: on the one hand, there's the vision of "fully autonomous driving," while on the other, there's concern about potential s...[Details]
On August 22, the National Energy Administration released the latest data, showing that by the end of July 2025, China's total number of electric vehicle charging infrastructure will reach 16.696 m...[Details]
Since its invention in the mid-1940s, the microwave oven has evolved from a humble beginning to commercial use, entering homes in the 1960s and rapidly gaining popularity. Its basic functionality a...[Details]
With the rapid development of electric vehicles in my country, people are beginning to pay attention to the issue of radiation from electric vehicles. We all know that mobile phones emit radiation,...[Details]
The complexity of the integrated circuits (ICs) used in electronic systems in vehicles is increasing. They aim to execute artificial intelligence (AI) algorithms to control autonomous driving funct...[Details]
Learned the following information.
Customer product: industrial computer motherboard
Glue application area: CPU/BGA filling
Glue color requirements: black or t...[Details]
Embedded System
京公网安备 11010802033920号
EEWORLD
