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BT169G

Description
0.8 A, 600 V, SCR, TO-92
CategoryAnalog mixed-signal IC    Trigger device   
File Size53KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
Download Datasheet Parametric View All

BT169G Overview

0.8 A, 600 V, SCR, TO-92

BT169G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Nominal circuit commutation break time100 µs
Critical rise rate of minimum off-state voltage25 V/us
Maximum DC gate trigger current0.2 mA
Maximum DC gate trigger voltage0.8 V
Maximum holding current5 mA
JESD-609 codee3
Maximum leakage current0.1 mA
On-state non-repetitive peak current8 A
Maximum on-state voltage1.3 V
Maximum on-state current500 A
Maximum operating temperature125 °C
Off-state repetitive peak voltage600 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Trigger device typeSCR
BT169 series
Thyristors logic level
Rev. 04 — 23 August 2004
Product data sheet
1. Product profile
1.1 General description
Passivated, sensitive gate thyristors in a SOT54 plastic package.
1.2 Features
s
Designed to be interfaced directly to microcontrollers, logic integrated circuits and
other low power gate trigger circuits.
1.3 Applications
s
General purpose switching and phase control applications.
1.4 Quick reference data
s
V
DRM
, V
RRM
200 V (BT169B)
s
V
DRM
, V
RRM
400 V (BT169D)
s
V
DRM
, V
RRM
600 V (BT169G)
s
I
T(RMS)
0.8 A
s
I
T(AV)
0.5 A
s
I
TSM
8 A.
2. Pinning information
Table 1:
Pin
1
2
3
Discrete pinning
Description
anode (a)
gate (g)
cathode (k)
sym037
Simplified outline
Symbol
321
SOT54 (TO-92)
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