A29040 Series
512K X 8 Bit CMOS 5.0 Volt-only,
Preliminary
Features
n
5.0V
±
10% for read and write operations
n
Access times:
- 55/70/90/120/150 (max.)
n
Current:
- 20 mA typical active read current
- 30 mA typical program/erase current
- 1
µA
typical CMOS standby
n
Flexible sector architecture
-
8 uniform sectors of 64 Kbyte each
-
Any combination of sectors can be erased
-
Supports full chip erase
-
Sector protection:
A hardware method of protecting sectors to prevent
any inadvertent program or erase operations within
that sector
n
Embedded Erase Algorithms
- Embedded Erase algorithm will automatically erase
the entire chip or any combination of designated
sectors and verify the erased sectors
- Embedded Program algorithm automatically writes
and verifies bytes at specified addresses
Typical 100,000 program/erase cycles per sector
20-year data retention at 125°C
- Reliable operation for the life of the system
Compatible with JEDEC-standards
- Pinout and software compatible with single-power-
supply Flash memory standard
-
Superior inadvertent write protection
Data
Polling and toggle bits
-
Provides a software method of detecting completion
of program or erase operations
Erase Suspend/Erase Resume
-
Suspends a sector erase operation to read data
from, or program data to, a non-erasing sector, then
resumes the erase operation
Package options
-
32-pin P-DIP, PLCC, or TSOP(Forward type)
Uniform Sector Flash Memory
n
n
n
n
n
n
General Description
The A29040 is a 5.0 volt-only Flash memory organized as
524,288 bytes of 8 bits each. The 512 Kbytes of data are
further divided into eight sectors of 64 Kbytes each for
flexible sector erase capability. The 8 bits of data appear
on I/O
0
- I/O
7
while the addresses are input on A0 to A18.
The A29040 is offered in 32-pin PLCC, TSOP, and PDIP
packages. This device is designed to be programmed in-
system with the standard system 5.0 volt VCC supply.
Additional 12.0 volt VPP is not required for in-system write
or erase operations. However, the A29040 can also be
programmed in standard EPROM programmers.
The A29040 has a second toggle bit, I/O
2
, to indicate
whether the addressed sector is being selected for erase,
and also offers the ability to program in the Erase Suspend
mode. The standard A29040 offers access times of 55, 70,
90, 120, and 150 ns, allowing high-speed microprocessors
to operate without wait states. To eliminate bus contention
the device has separate chip enable (
CE
), write enable
(
WE
) and output enable (
OE
) controls.
The device requires only a single 5.0 volt power supply for
both read and write functions. Internally generated and
regulated voltages are provided for the program and erase
operations.
The A29040 is entirely software command set compatible
with the JEDEC single-power-supply Flash standard.
Commands are written to the command register using
standard microprocessor write timings. Register contents
serve as input to an internal state-machine that controls
the erase and programming circuitry. Write cycles also
internally latch addresses and data needed for the
programming and erase operations. Reading data out of
the device is similar to reading from other Flash or EPROM
devices.
Device programming occurs by writing the proper program
command sequence. This initiates the Embedded Program
algorithm - an internal algorithm that automatically times
the program pulse widths and verifies proper program
margin.
Device erasure occurs by executing the proper erase
command sequence. This initiates the Embedded Erase
algorithm - an internal algorithm that automatically
preprograms the array (if it is not already programmed)
before executing the erase operation. During erase, the
device automatically times the erase pulse widths and
verifies proper erase margin.
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(August, 2001, Version 0.5)
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AMIC Technology, Inc.
A29040 Series
The host system can detect whether a program or erase
operation is complete by reading the I/O
7
(
Data
Polling)
and I/O
6
(toggle) status bits. After a program or erase cycle
has been completed, the device is ready to read array data
or accept another command.
The sector erase architecture allows memory sectors to be
erased and reprogrammed without affecting the data
contents of other sectors. The A29040 is fully erased when
shipped from the factory.
The hardware sector protection feature disables operations
for both program and erase in any combination of the
sectors of memory. This can be achieved via programming
equipment.
The Erase Suspend feature enables the user to put erase
on hold for any period of time to read data from, or
program data to, any other sector that is not selected for
erasure. True background erase can thus be achieved.
Power consumption is greatly reduced when the device is
placed in the standby mode.
Pin Configurations
n
DIP
A18
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
I/O
1
I/O
2
VSS
1
2
3
4
5
6
32
31
30
29
28
27
VCC
WE
A17
n
PLCC
VCC
A12
A16
A18
4
3
A15
2
1
32
31
A14
A13
A8
A9
A11
OE
A10
CE
I/O
7
I/O
6
I/O
5
I/O
4
A7
A6
A5
A4
A3
A2
A1
A0
I/O
0
5
6
7
8
9
10
11
12
13
30
A17
WE
29
28
27
26
A14
A13
A8
A9
A11
OE
A10
CE
I/O
7
8
9
10
11
12
13
14
15
16
A29040
7
26
25
24
23
22
21
20
19
18
17
A29040L
25
24
23
22
21
14
15
16
17
18
19
I/O
5
VSS
I/O
1
I/O
2
I/O
3
I/O
4
I/O
3
n
TSOP (Forward type)
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
OE
A10
CE
I/O
7
I/O
6
I/O
5
I/O
4
I/O
3
VSS
I/O
2
I/O
1
I/O
0
A0
A1
A2
A3
A29040V
I/O
6
20
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AMIC Technology, Inc.
A29040 Series
Block Diagram
I/O
0
- I/O
7
VCC
VSS
Erase Voltage
Generator
Input/Output
Buffers
WE
State
Control
PGM Voltage
Generator
Chip Enable
Output Enable
Logic
STB
Data Latch
Command
Register
CE
OE
Y-Decoder
Address Latch
STB
VCC Detector
Timer
Y-Gating
X-decoder
Cell Matrix
A0-A18
Pin Descriptions
Pin No.
A0 - A18
I/O
0
- I/O
7
Description
Address Inputs
Data Inputs/Outputs
Chip Enable
Write Enable
Output Enable
Ground
Power Supply
CE
WE
OE
VSS
VCC
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(August, 2001, Version 0.5)
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AMIC Technology, Inc.
A29040 Series
Absolute Maximum Ratings*
Ambient Operating Temperature . . . . . -55°C to + 125°C
Storage Temperature . . . . . . . . . . . . . . -65°C to + 125°C
VCC to Ground . . . . . . . . . . . . . . . . . . . . . . -2.0V to 7.0V
Output Voltage (Note 1) . . . . . . . . . . . . . . . -2.0V to 7.0V
A9 &
OE
(Note 2) . . . . . . . . . . . . . . . . . . . -2.0V to 12.5V
All other pins (Note 1) . . . . . . . . . . . . . . . . . -2.0V to 7.0V
Output Short Circuit Current (Note 3) . . . . . . . . . . 200mA
*Comments
Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to this device.
These are stress ratings only. Functional operation of
this device at these or any other conditions above
those indicated in the operational sections of these
specification is not implied or intended. Exposure to
the absolute maximum rating conditions for extended
periods may affect device reliability.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5V.
During voltage transitions, inputs may undershoot VSS
to -2.0V for periods of up to 20ns. Maximum DC voltage
on output and I/O pins is VCC +0.5V. During voltage
transitions, outputs may overshoot to VCC +2.0V for
periods up to 20ns.
2. Minimum DC input voltage on A9 pins is -0.5V. During
voltage transitions, A9 and
OE
may overshoot VSS to
-2.0V for periods of up to 20ns. Maximum DC input
voltage on A9 and
OE
is +12.5V which may overshoot
to 13.5V for periods up to 20ns.
3. No more than one output is shorted at a time. Duration
of the short circuit should not be greater than one
second.
Operating Ranges
Commercial (C) Devices
Ambient Temperature (T
A
) . . . . . . . . . . . . . 0°C to +70°C
VCC Supply Voltages
VCC for
±
10% devices . . . . . . . . . . . . . +4.5V to +5.5V
Operating ranges define those limits between which the
functionally of the device is guaranteed.
Device Bus Operations
This section describes the requirements and use of the
device bus operations, which are initiated through the
internal command register. The command register itself
does not occupy any addressable memory location. The
register is composed of latches that store the commands,
along with the address and data information needed to
execute the command. The contents of the register serve
as inputs to the internal state machine. The state machine
outputs dictate the function of the device. The appropriate
device bus operations table lists the inputs and control
levels required, and the resulting output. The following
subsections describe each of these operations in further
detail.
Table 1. A29040 Device Bus Operations
Operation
Read
Write
CMOS Standby
TTL Standby
Output Disable
CE
L
L
VCC
±
0.5 V
H
L
OE
L
H
X
X
H
WE
H
L
X
X
H
A0 – A18
A
IN
A
IN
X
X
X
I/O
0
- I/O
7
D
OUT
D
IN
High-Z
High-Z
High-Z
Legend:
L = Logic Low = V
IL
, H = Logic High = V
IH
, V
ID
= 12.0
±
0.5V, X = Don't Care, D
IN
= Data In, D
OUT
= Data Out, A
IN
= Address In
Note: See the "Sector Protection/Unprotection" section, for more information.
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AMIC Technology, Inc.
A29040 Series
Requirements for Reading Array Data
To read array data from the outputs, the system must drive
the
CE
and
OE
pins to V
IL
.
CE
is the power control and
selects the device.
OE
is the output control and gates
array data to the output pins.
WE
should remain at V
IH
all
the time during read operation. The internal state machine
is set for reading array data upon device power-up, or after
a hardware reset. This ensures that no spurious alteration
of the memory content occurs during the power transition.
No command is necessary in this mode to obtain array
data. Standard microprocessor read cycles that assert valid
addresses on the device address inputs produce valid data
on the device data outputs. The device remains enabled for
read access until the command register contents are
altered.
See "Reading Array Data" for more information. Refer to the
AC Read Operations table for timing specifications and to
the Read Operations Timings diagram for the timing
waveforms, l
CC1
in the DC Characteristics table represents
the active current specification for reading array data.
"Autoselect Mode" and "Autoselect Command Sequence"
sections for more information.
I
CC2
in the Characteristics table represents the active
current specification for the write mode. The "AC
Characteristics" section contains timing specification tables
and timing diagrams for write operations.
Program and Erase Operation Status
During an erase or program operation, the system may
check the status of the operation by reading the status bits
on I/O
7
- I/O
0
. Standard read cycle timings and I
CC
read
specifications apply. Refer to "Write Operation Status" for
more information, and to each AC Characteristics section
for timing diagrams.
Standby Mode
When the system is not reading or writing to the device, it
can place the device in the standby mode. In this mode,
current consumption is greatly reduced, and the outputs are
placed in the high impedance state, independent of the
OE
input.
The device enters the CMOS standby mode when the
CE
pin is held at V
CC
±
0.5V. (Note that this is a more restricted
voltage range than V
IH
.) The device enters the TTL standby
mode when
CE
is held at V
IH
. The device requires the
standard access time (t
CE
) before it is ready to read data.
If the device is deselected during erasure or programming,
the device draws active current until the operation is
completed.
I
CC3
in the DC Characteristics tables represents the standby
current specification.
Writing Commands/Command Sequences
To write a command or command sequence (which
includes programming data to the device and erasing
sectors of memory), the system must drive
WE
and
CE
to
V
IL
, and
OE
to V
IH
. An erase operation can erase one
sector, multiple sectors, or the entire device. The Sector
Address Tables indicate the address range that each sector
occupies. A "sector address" consists of the address inputs
required to uniquely select a sector. See the "Command
Definitions" section for details on erasing a sector or the
entire chip, or suspending/resuming the erase operation.
After the system writes the autoselect command sequence,
the device enters the autoselect mode. The system can
then read autoselect codes from the internal register (which
is separate from the memory array) on I/O
7
- I/O
0
. Standard
read cycle timings apply in this mode. Refer to the
Output Disable Mode
When the
OE
input is at V
IH
, output from the device is
disabled. The output pins are placed in the high impedance
state.
Table 2. Sector Addresses Table
Sector
SA0
SA1
SA2
SA3
SA4
SA5
SA6
SA7
A18
0
0
0
0
1
1
1
1
A17
0
0
1
1
0
0
1
1
A16
0
1
0
1
0
1
0
1
Address Range
00000h - 0FFFFh
10000h - 1FFFFh
20000h - 2FFFFh
30000h - 3FFFFh
40000h - 4FFFFh
50000h - 5FFFFh
60000h - 6FFFFh
70000h - 7FFFFh
Note: All sectors are 64 Kbytes in size.
PRELIMINARY
(August, 2001, Version 0.5)
5
AMIC Technology, Inc.
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