Power Transistor Arrays
PUB4122
(PU4122)
, PUB4422
(PU4422)
Silicon NPN triple diffusion planar type darlington
For power amplification
■
Features
•
Built-in zener diode (30 V) between collector and base
•
Small variation in withstand pressure
•
Large energy handling capability E
s/b
•
High-speed switching
•
PUB4122 (PU4122): NPN 4 elements
PUB4422 (PU4422): NPN 2 elements
×
2
25.3
±0.2
Unit: mm
4.0
±0.2
9.5
±0.2
8.0
±0.2
0.8
±0.25
0.5
±0.15
1.0
±0.25
2.54
±0.2
9
×
2.54 = 22.86
±0.25
■
Absolute Maximum Ratings
T
C
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
T
a
=
25°C
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
30±5
30±5
5
4
8
15
3.5
150
−55
to
+150
°C
°C
Unit
V
V
V
A
A
W
1.65
±0.2
Solder Dip
5.3
±0.5
4.4
±0.5
0.5
±0.15
C 1.5
±0.5
1: Emitter
2: Base
3: Collector
4: Base
5: Collector
1 2 3 4 5 6 7 8 9 10
6: Base
7: Collector
8: Base
9: Collector
10: Emitter
SIP10-A1 Package
■
Electrical Characteristics
T
C
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2 *1
Collector-emitter saturation voltage
V
CE(sat)
V
BE(sat)
f
T
t
on
t
stg
t
f
E
s/b
Conditions
I
C
=
5 mA, I
B
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
3 V, I
C
=
0.5 A
V
CE
=
3 V, I
C
=
3 A
I
C
=
3 A, I
B
=
12 mA
I
C
=
5 A, I
B
=
20 mA
Base-emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Energy handling capability
*2
I
C
=
3 A, I
B
=
12 mA
V
CE
=
10 V, I
C
=
0.5 A, f
=
1 MHz
I
C
=
3 A
I
B1
=
12 mA, I
B2
= −12
mA
V
CC
=
20 V
I
C
=
2 A, L
=
100 mH, R
BE
=
100
Ω
200
20
0.3
3.0
1.0
1 000
1 000
10 000
2.0
4.0
2.5
V
MHz
µs
µs
µs
mJ
V
Min
25
Typ
Max
35
100
2
Unit
V
µA
mA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: E
s/b
test circuit
X
Mercury relay
Rank
Free
P
Q
L
h
FE
1 000 to 10 000 2 000 to 10 000 1 000 to 5 000
Y
R
BE
Z
Note) The part numbers in the parenthesis show conventional part number.
Publication date: March 2004
SJK00065AED
1
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
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tronic equipment (such as office equipment, communications equipment, measuring instruments and house-
hold appliances).
Consult our sales staff in advance for information on the following applications:
•
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combus-
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•
Any applications other than the standard applications intended.
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tions satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rat-
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Even when the products are used within the guaranteed values, take into the consideration of incidence of
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