BLF6G22LS-130
Power LDMOS transistor
Rev. 01 — 23 May 2008
Product data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
Table 1.
Typical performance
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L(AV)
(W)
30
G
p
(dB)
17
η
D
(%)
28.5
IMD3
(dBc)
−37
[1]
ACPR
(dBc)
−40
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;
carrier spacing 10 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a
supply voltage of 28 V and an I
Dq
of 1100 mA:
N
Average output power = 30 W
N
Power gain = 17 dB (typ)
N
Efficiency = 28.5 %
N
IMD3 =
−37
dBc
N
ACPR =
−40
dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (2000 MHz to 2200 MHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
NXP Semiconductors
BLF6G22LS-130
Power LDMOS transistor
1.3 Applications
I
RF power amplifiers W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Graphic symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G22LS-130
-
Description
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
34
+150
225
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
°C;
P
L
= 30 W
Typ
Unit
0.43 K/W
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
2 of 11
NXP Semiconductors
BLF6G22LS-130
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
V
DS
= 10 V; I
D
= 180 mA
V
DS
= 28 V;
I
D
= 1100 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 6.3 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
1.6
-
26.5
-
-
-
-
Typ
-
1.9
2.1
-
34
-
12
Max
-
2.4
2.6
5
-
450
-
Unit
V
V
V
µA
A
nA
S
0.085 0.135
Ω
3.15
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1100 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter
P
L(AV)
G
p
RL
in
η
D
IMD3
ACPR
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 30 W
P
L(AV)
= 30 W
P
L(AV)
= 30 W
P
L(AV)
= 30 W
Conditions
Min
-
16
-
25.5
-
-
Typ
30
17
−9
28.5
−37
−40
Max
-
-
−6
-
−34.5
−38
Unit
W
dB
dB
%
dBc
dBc
third order intermodulation distortion P
L(AV)
= 30 W
7.1 Ruggedness in class-AB operation
The BLF6G22LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
DS
= 28 V;
I
Dq
= 1100 mA; P
L
= 130 W (CW); f = 2170 MHz.
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
3 of 11
NXP Semiconductors
BLF6G22LS-130
Power LDMOS transistor
7.2 One-tone CW
19
G
p
(dB)
17
001aai093
η
D
60
η
D
(%)
40
G
p
15
20
13
0
40
80
120
P
L
(W)
0
160
V
DS
= 28 V; I
Dq
= 1100 mA; f = 2170 MHz.
Fig 1.
One-tone CW power gain and drain efficiency as functions of load power;
typical values
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
4 of 11
NXP Semiconductors
BLF6G22LS-130
Power LDMOS transistor
7.3 Two-tone CW
19
G
p
(dB)
G
p
17
40
001aai094
60
η
D
(%)
η
D
15
20
13
0
40
80
120
P
L
(W)
0
160
V
DS
= 28 V; I
Dq
= 1100 mA; f
1
= 2169.95 MHz; f
2
= 2170.05 MHz.
Fig 2.
0
IMD
(dBc)
−20
Two-tone CW power gain and drain efficiency as functions of peak envelope load power; typical values
001aai095
0
IMD3
(dBc)
−20
001aai096
IMD3
−40
IMD5
IMD7
−40
−60
(1)
(2)
(5)
(3)
(4)
−80
0
50
100
150
200
250
P
L(PEP)
(W)
−60
0
50
100
150
200
250
P
L(PEP)
(W)
V
DS
= 28 V; I
Dq
= 1100 mA; f
1
= 2169.95 MHz;
f
2
= 2170.05 MHz.
V
DS
= 28 V; f
1
= 2169.95 MHz; f
2
= 2170.05 MHz.
(1) I
Dq
= 900 mA
(2) I
Dq
= 1000 mA
(3) I
Dq
= 1100 mA
(4) I
Dq
= 1200 mA
(5) I
Dq
= 1300 mA
Fig 3.
Intermodulation distortion as a function of
peak envelope load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values
BLF6G22LS-130_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 23 May 2008
5 of 11
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