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BLF177

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size595KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Environmental Compliance
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BLF177 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BLF177 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)220 W
surface mountNO
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer
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Index Files: 214  81  571  2532  469  5  2  12  51  10 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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