DISCRETE SEMICONDUCTORS
DATA SHEET
M3D792
BLF2022-125
UHF power LDMOS transistor
Objective specification
Supersedes data of 2002 April 02
2003 Mar 07
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
FEATURES
•
Typical W-CDMA performance at a supply voltage of
28 V and I
DQ
of 1 A
– Output power = 20 W (AV)
– Gain = 12 dB
– Efficiency = 19%
– ACPR =
−42
dBc at 3.84 MHz
•
Easy power control
•
Excellent ruggedness
•
High power gain
•
Excellent thermal stability
•
Designed for broadband operation (2000 to 2200 MHz)
•
Internally matched for ease of use.
APPLICATIONS
•
RF power amplifiers for W-CDMA base stations and
multicarrier applications in the 2000 to 2200 MHz
frequency range
DESCRIPTION
125 W LDMOS power transistor for base station
applications at frequencies from 2000 to 2200 MHz.
Top view
2
1
BLF2022-125
PINNING - SOT634A
PIN
1
2
3
drain
gate
source, connected to flange
DESCRIPTION
3
MBL367
Fig.1 Simplified outline.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°C
in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels,
3.84 MHz channel bandwidth; Peak/Average = 9.8 dB at 0.01% probability on CCDF.
MODE OF OPERATION
single carrier W-CDMA
f
(MHz)
2110 to 2170
V
DS
(V)
28
P
L avg
(W)
30
G
p
(dB)
typ 12
η
D
(%)
typ 19
d
im
(dBc)
typ
−42
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
DS
V
GS
I
D
T
stg
T
j
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
storage temperature
junction temperature
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
2003 Mar 07
2
−
−
−
−65
−
MIN.
65
±15
tbd
+150
200
MAX.
V
V
A
°C
°C
UNIT
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
Note
1. Thermal resistance is determined under specified RF operating conditions.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
(BR)DSS
V
GSth
I
DSS
I
GSS
g
fs
R
DSon
C
rss
PARAMETER
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate leakage current
forward transconductance
drain-source on-state resistance
feedback capacitance
CONDITIONS
V
GS
= 0; I
D
= 2.5 mA
V
DS
= 10 V; I
D
= 240 mA
V
GS
= 0; V
DS
= 26 V
V
GS
=
±15
V; V
DS
= 0
V
DS
= 10 V; I
D
= 16 A
V
GS
= V
GSth
+ 9 V; I
D
= 8 A
V
GS
= 0; V
DS
= 26 V; f = 1 MHz
MIN.
65
4.5
−
−
−
−
−
PARAMETER
thermal resistance from junction to case
note 1
CONDITIONS
BLF2022-125
VALUE
0.55
UNIT
K/W
TYP.
−
−
−
−
9.5
0.07
tbd
MAX.
−
5.5
10
40
−
−
−
UNIT
V
V
µA
nA
S
Ω
pF
2003 Mar 07
3
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
BLF2022-125
APPLICATION INFORMATION
RF performance at T
h
= 25
°C
in a common source test circuit; single-carrier W-CDMA test model 1, 64 channels, with
68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF.
SYMBOL
G
p
PARAMETER
common-source power gain
CONDITIONS
V
D
= 28 V; P
out
= 20 W (AV), single
carrier W-CDMA; I
DQ
= 1000 mA;
f = 2.11 to 2.17 GHz
V
D
= 28 V; P
out
= 20 W (AV), single
carrier W-CDMA; I
DQ
= 1000 mA;
f = 2.11 to 2.17 GHz
V
D
= 28 V; P
out
= 20 W (AV), single
carrier W-CDMA; I
DQ
= 1000 mA;
f = 2.11 to 2.17 GHz
V
D
= 28 V; P
out
= 20 W (AV), single
carrier W-CDMA; I
DQ
= 1000 mA;
f = 2.11 to 2.17 GHz
V
D
= 28 V; P
out
= 20 W (AV) single
carrier W-CDMA;VSWR = 5:1 through
all phases
MIN.
11
TYP.
12
MAX.
−
UNIT
dB
η
D
drain efficiency
17
19
−
%
ACPR
adjacent channel power ratio
−
−49
−39
dBc
I
RL
input return loss
−
−10
−6
dB
ψ
output mismatch
no degradation in RF
performance before and after
test
RF performance at T
h
= 25
°C
in a common source test circuit; two-carrier W-CDMA signals, 3GPP test mode 1 64
channels, with 68% clipping, 3.84 MHz channel bandwidth; Peak/Average = 8.5 dB at 0.01% probability on CCDF per
channel frequency range is 2.11 GHz to 2.17 GHz; carrier spacing is 10 MHz.
SYMBOL
G
p
η
D
ACPR
PARAMETER
common-source power gain
drain efficiency
adjacent channel power ratio
CONDITIONS
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA; ACPR is measured at
f
1
=
−5
MHz and f
2
= +5 MHz
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA; ACPR is measured at
f
1
=
−10
MHz and f
2
= +10 MHz
V
D
= 28 V; P
out
= 20 W (AV);
I
DQ
= 1000 mA
MIN.
−
−
−
TYP.
12
19
−40
MAX.
−
−
−
UNIT
dB
%
dBc
d
3
third order intermodulation
distortion
input return loss
−
−36
−
dB
I
RL
−
−10
−
dB
2003 Mar 07
4
Philips Semiconductors
Objective specification
UHF power LDMOS transistor
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 2 leads
BLF2022-125
SOT634A
Package under
development
D
Philips Semiconductors reserves the
right to make changes without notice.
A
F
3
D1
U1
q
C
B
c
L
1
U2
p
w1
M
A
M
B
M
E1
E
A
L
2
Q
b
w2
M
C
M
0
5
scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
mm
inches
A
4.83
3.68
0.190
0.145
b
12.82
12.57
0.505
0.495
c
0.15
0.08
0.006
0.003
D
22.58
22.12
0.889
0.871
D1
22.56
22.15
0.888
0.872
E
E1
F
1.14
0.89
0.045
0.035
L
5.33
4.32
0.210
0.170
p
3.38
3.12
0.133
0.123
Q
1.70
1.45
0.067
0.057
q
27.94
1.100
U1
34.16
33.91
1.345
1.335
U2
13.84
13.59
0.545
0.535
w1
0.25
0.010
w2
0.51
0.020
13.34 13.34
13.08 13.08
0.525 0.525
0.515 0.515
OUTLINE
VERSION
SOT634A
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
01-11-27
2003 Mar 07
5
京公网安备 11010802033920号
EEWORLD
