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BLF548

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size90KB,12 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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BLF548 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BLF548 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)15 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum operating temperature200 °C
Polarity/channel typeN-CHANNEL
Base Number Matches1
DISCRETE SEMICONDUCTORS
DATA SHEET
BLF548
UHF push-pull power MOS
transistor
Product specification
October 1992
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